Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference
Advanced Electronic Materials, EarlyView.This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho +6 more
wiley +1 more source
III-V Heterostructure Nanowire Tunnel FETs
IEEE Journal of the Electron Devices Society, 2015 In this paper, InAs/GaSb nanowire tunnel field-effect transistors (TFETs) are studied theoretically and experimentally. A 2-band 1-D analytic tunneling model is used to calculate the on- and off-current levels of nanowire TFETs with staggered source ...
Erik Lind +3 more
doaj +1 more source
Amplification of GaSb-Based Diode Lasers in an Erbium-Doped Fluoride Fibre Amplifier
IEEE Photonics Journal, 2023 Building upon recent advances in GaSb-based diode lasers and Er-doped fluoride fibre technologies, this article demonstrates for the first time the fibre-based amplification of mid-infrared diode lasers in the wavelength range around 2.78 $\mu$m.
Nikolai B. Chichkov +12 more
doaj +1 more source
Growth and characteristics of type-II InAs/GaSb superlattice-based detectors [PDF]
, 2011 We report on growth and device performance of infrared photodetectors based on type II InAs/Ga(In)Sb strain layer superlattices (SLs) using the complementary barrier infrared detector (CBIRD) design.
Gunapala, S. D. +7 more
core +1 more source
Topological Materials and Related Applications
Advanced Electronic Materials, EarlyView.This review covers topological materials—including topological insulators, quantum valley Hall and quantum spin Hall insulators, and topological Weyl and Dirac semimetals—as well as their most recent advancements in fields such as spintronics, electronics, photonics, thermoelectrics, and catalysis.
Carlo Grazianetti +9 more
wiley +1 more source
Strained band edge characteristics from hybrid density functional theory and empirical pseudopotentials: GaAs, GaSb, InAs and InSb [PDF]
, 2016 The properties of a semiconductor get drastically modified when the crystal point group symmetry is broken under an arbitrary strain. We investigate the family of semiconductors consisting of GaAs, GaSb, InAs and InSb, considering their electronic band ...
Bulutay, Ceyhun +2 more
core +2 more sources
Emergent Spin Hall Quantization and High‐Order van Hove singularities in Square‐Octagonal MA2Z4
Advanced Physics Research, EarlyView.Square‐octagonal MA2Z4 (M = Mo/W, A = Si/Ge, Z = pnictogen) monolayers are predicted to realize quantum spin Hall insulators with nearly quantized spin Hall conductivity enabled by an emergent spin U(1) quasi‐symmetry. Materials with Z = As and Sb host quasi‐flat bands with high‐order van Hove singularities near the Fermi level, making them promising ...
Rahul Verma +3 more
wiley +1 more source
Scanning tunneling microscopy of lnAs/GaSb superlattices: Subbands, interface roughness, and interface asymmetry [PDF]
, 1994 Scanning tunneling microscopy and spectroscopy is used to characterize InAs/GaSb superlattices, grown by molecular-beam epitaxy. Roughness at the interfaces between InAs and GaSb layers is directly observed in the images, and a quantitative spectrum of ...
Collins, D. A. +4 more
core
Electronic structures of [001]- and [111]-oriented InSb and GaSb free-standing nanowires
, 2015 We report on a theoretical study of the electronic structures of InSb and GaSb nanowires oriented along the [001] and [111] crystallographic directions.
Gaohua Liao +7 more
core +1 more source
New negative differential resistance device based on resonant interband tunneling [PDF]
, 1989 We propose and demonstrate a novel negative differential resistance device based on resonant interband tunneling. Electrons in the InAs/AlSb/GaSb/AlSb/InAs structure tunnel from the InAs conduction band into a quantized state in the GaSb valence band ...
Chow, D. H. +2 more
core +1 more source