Results 71 to 80 of about 28,769 (195)
Scientific Reports, 2021 We report the growth mechanism and optical characteristics of type-II band-aligned GaSb quantum dots (QDs) grown on GaAs using a droplet epitaxy-driven nanowire formation mechanism with molecular beam epitaxy.
Min Baik +6 more
doaj +1 more source
Mid‐Infrared Integrated Photonics: Material Platforms and Emerging Applications
Laser &Photonics Reviews, Volume 20, Issue 6, 18 March 2026.Mid‐infrared (MIR) integrated photonics enables advanced chemical and biological sensing through the unique absorption features of molecules in the 2–20 µm range. This review highlights recent material advances such as chalcogenide glasses, silicon, and graphene and explores MIR applications in environmental monitoring, medical diagnostics ...
Muhammad Ali Butt +2 more
wiley +1 more source
Gate-controlled semimetal-topological insulator transition in an InAs/GaSb heterostructure
, 2015 We report a gate-controlled transition of a semimetallic InAs/GaSb heterostructure to a topological insulator. The transition is induced by decreasing the degree of band inversion with front and back gate voltages.
Harada, Yuichi +3 more
core +1 more source
Design and TCAD Simulation of p+–n+ InAs‐Based TFET
Nano Select, Volume 7, Issue 3, March 2026.A physics‐based design and optimization of a p+−n+${{p}^ + } - {{n}^ + }$ InAs tunnel field‐effect transistor is presented using calibrated quantum‐corrected TCAD simulations. By employing a composite figure of merit that unifies digital and RF metrics, the proposed homojunction architecture achieves steep subthreshold swing, enhanced cutoff frequency,
Muhammad Elgamal +5 more
wiley +1 more source
Water Resources Research, Volume 62, Issue 3, March 2026.Abstract Although conglomerates composed of clasts and matrix are commonly interbedded with sandstones at geologic CO2 storage sites, their residual trapping behavior remains poorly understood. This study investigates the influence of clast‐induced heterogeneity on residual CO2 trapping during water imbibition, using two natural conglomerate cores from
Hyunjeong Jeon +6 more
wiley +1 more source
Nano-Ridge Engineering of GaSb for the Integration of InAs/GaSb Heterostructures on 300 mm (001) Si
Crystals, 2020 Nano-ridge engineering (NRE) is a novel heteroepitaxial approach for the monolithic integration of lattice-mismatched III-V devices on Si substrates.
Marina Baryshnikova +11 more
doaj +1 more source
Terahertz Volume Plasmon‐Polariton Modulation in All‐Dielectric Hyperbolic Metamaterials
Advanced Optical Materials, Volume 14, Issue 7, 16 February 2026.THz volume plasmon‐polariton (VPP) propagation through plasmon‐based hyperbolic metamaterials, made of alternating layers of doped and undoped III‐V semiconductors. Abstract The development of plasmonics and related applications in the terahertz range faces limitations due to the intrinsic high electron density of the standard metals.
Stefano Campanaro +3 more
wiley +1 more source
Unraveling Band‐Tail Effects on Temperature‐Dependent Emission in GaAsBi via Photoluminescence
Advanced Science, Volume 13, Issue 9, 13 February 2026.An innovative dual‐spectroscopy approach resolves the debate over GaAsBi's emission temperature sensitivity. By combining temperature‐dependent photoluminescence and transmission spectroscopy, the method decouples the contributions of band‐tail states from the intrinsic band‐edge behavior.
Bing Yan +6 more
wiley +1 more source
Nanoscale Research Letters, 2009 We report structural analysis of completely relaxed GaSb epitaxial layers deposited monolithically on GaAs substrates using interfacial misfit (IMF) array growth mode.
Balakrishnan G +7 more
doaj +1 more source
Revista de Investigaciones Universidad del Quindío, 2012 En este trabajo se presenta la obtención de una configuración de circuito electrónico basado en GaSb, para una aplicación de filtro sintonizado alrededor de 20 MHz.
Jhon Jairo Prías-Barragán +3 more
doaj +1 more source