Results 81 to 90 of about 28,769 (195)
Nanoscale Research Letters, 2018 In the present work, we report on the in-plane electrical transport properties of midwave (MWIR) and longwave infrared (LWIR) InAs/GaSb type-II superlattices (T2SLs) grown by molecular beam epitaxy (MBE) system on GaAs (001) substrate.
D. Benyahia +7 more
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P-n junctions formed in gallium antimonide [PDF]
, 1970 Vapor phase deposition process forms a heavily doped n-region on a melt-grown p-type gallium antimonide substrate. HCl transports gallium to the reaction zone, where it combines with antimony hydride and the dopant carrier, hydrogen telluride ...
Clough, R., Richman, D., Tietjen, J.
core +1 more source
Electric fields and valence band offsets at strained [111] heterojunctions
, 1997 [111] ordered common atom strained layer superlattices (in particular the common anion GaSb/InSb system and the common cation InAs/InSb system) are investigated using the ab initio full potential linearized augmented plane wave (FLAPW) method.
%N. Tit +29 more
core +1 more source
Performance evaluation of a GaSb thermophotovoltaic converter
Revue des Énergies Renouvelables, 2012 In recent years, Gallium Antimonide (GaSb), which has smallest bandgap among III-V semiconductors family, became the subject of extensive investigations in the field of thermophotovoltaic (TPV) converters, because of the recent improvements in ...
F. Bouzid, L. Dehimi
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Intervalley scattering in terahertz quantum cascade lasers with GaSb and InGaSb wells
AIP Advances, 2018 We theoretically study the performance of terahertz quantum cascade lasers (THz-QCLs) with GaSb wells and InxGa1−xSb wells. The results of rate-equation calculations reveal that the intervalley scattering of electrons from the Γ valley to the L valley in
Hiroaki Yasuda
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Lateral Epitaxial Overgrowth of GaSb on GaAs and GaSb Substrates
Microscopy and Microanalysis, 2000 Abstract Lateral epitaxial overgrowth (LEO) technique has recently been used to improve the quality of semiconductor layers grown on a substrate. Previous studies with GaN grown on sapphire showed a significant reduction in dislocation density in LEO layers.
C K Inoki +5 more
openaire +1 more source
Optical Properties of GaSb Nanofibers
Nanoscale Research Letters, 2011 Amorphous GaSb nanofibers were obtained by ion beam irradiation of bulk GaSb single-crystal wafers, resulting in fibers with diameters of ~20 nm. The Raman spectra and photoluminescence (PL) of the ion irradiation-induced nanofibers before and after ...
Perez-Bergquist Alejandro +6 more
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Study of Te diffusion into structure GaSb-n/GaSb-p on GaSb-n substrate [PDF]
Acta Crystallographica Section A Foundations of Crystallography, 2005 E. Rosendo +6 more
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The GaSb-CoGa1.3 eutectic composite as a promising material for tensometry
Moldavian Journal of the Physical Sciences, 2013 New small-size tensoresistors based on the GaSb-CoGa1.3 semiconductor eutectic composite have been designed; they exhibit linear, nonhysteresis, and thermostable characteristics, stable parameters, and high reliability and operate in a temperatures range
Rahimov, R. +4 more
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Preepitaxial substrate treatment of GaSb for liquid phase technology homoepitaxial growth [PDF]
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2008 The results of investigation to find out the optimal conditions of preepitaxial GaSb substrate treatment by chemical etching in inorganic acid mixes are offered.
Andronova О. V., Kurak V. V.
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