Results 91 to 100 of about 6,232 (203)

Gate-controlled semimetal-topological insulator transition in an InAs/GaSb heterostructure

, 2015
We report a gate-controlled transition of a semimetallic InAs/GaSb heterostructure to a topological insulator. The transition is induced by decreasing the degree of band inversion with front and back gate voltages.
Harada, Yuichi, Muraki, Koji, Onomitsu, Koji, Suzuki, Kyoichi   +3 more
core   +1 more source

Study of Te diffusion into structure GaSb-n/GaSb-p on GaSb-n substrate [PDF]

Acta Crystallographica Section A Foundations of Crystallography, 2005
E. Rosendo, R. Vargas-Sanabria, J. Martínez, T. Díaz, H. Juárez, F. De Anda, M. A. Vidal   +6 more
openaire   +1 more source

Finite Conductivity in Mesoscopic Hall Bars of Inverted InAs/GaSb Quantum Wells

, 2010
We have studied experimentally the low temperature conductivity of mesoscopic size InAs/GaSb quantum well Hall bar devices in the inverted regime.
Gerard Sullivan, Ivan Knez, R. R. Du, S. Datta   +3 more
core   +1 more source

Epitaxial growth of high-quality GaAs on Si(001) using ultrathin buffer layers

AIP Advances
The direct growth of III–V semiconductors on silicon holds tremendous potential for photonics applications. However, the inherent differences in their properties lead to defects in the epitaxial layer, including threading dislocations (TDs), antiphase ...
Kun Cheng, Tianyi Tang, Wenkang Zhan, Zhenyu Sun, Bo Xu, Chao Zhao, Zhanguo Wang   +6 more
doaj   +1 more source

Generic technique to grow III-V semiconductor nanowires in a closed glass vessel

AIP Advances, 2016
Crystalline III-V semiconductor nanowires have great potential in fabrication of nanodevices for applications in nanoelectronics and optoelectronics, and for studies of novel physical phenomena.
Kan Li, Yingjie Xing, H. Q. Xu
doaj   +1 more source

Independently Accessible Dual-Band Barrier Infrared Detector Using Type-II Superlattices

Photonics
We report a novel dual-band barrier infrared detector (DBIRD) design using InAs/GaSb type-II superlattices (T2SLs). The DBIRD structure consists of back-to-back barrier diodes: a “blue channel” (BC) diode which has an nBp architecture, an n-type layer of
Seung-man Park, Christoph H. Grein
doaj   +1 more source

Laser materials for the 0.67-microns to 2.5-microns range [PDF]

Basic requirements for obtaining injection laser action in III-V semiconductors are discussed briefly. A detailed review is presented of materials suitable for lasers emitting at 0.67, 1.44, 1.93, and 2.5 microns.
Ladany, Ivan, Martinelli, Ramon U., Toda, Minoru, Zamerowski, Thomas J.   +3 more
core   +1 more source

Perfection of materials technology for producing improved Gunn-effect devices [PDF]

Chemical vapor deposition system for improved Gunn effect devices using arsenic chloride 3 ...
Baxter, R. D., Beer, A. C., Bennett, J. E., Miller, J. F., Moody, J. W.   +4 more
core   +1 more source

Vapor phase growth system and its use in the preparation of several III-V compound semiconductors [PDF]

Vapor phase growth and properties of semiconductor ...
Enstrom, R. E., Miller, E. A., Sigai, A. G.   +2 more
core   +1 more source

Interband cascade lasers grown simultaneously on GaSb, GaAs and Si substrates

Optics Express
We report on Sb-based interband cascade lasers simultaneously grown on GaSb, GaAs and Si substrates. 8 µm x 2 mm devices exhibited similar threshold currents around 40 mA at 20°C and achieved continuous-wave (CW) operation up to 65°C on GaSb, GaAs and Si substrates despite a dislocation density of ∼ 4.108 cm-2 for both mismatched substrates.
Maeva Fagot, Daniel A. Díaz-Thomas, Audrey Gilbert, Gad Kombila, Michel Ramonda, Yves Rouillard, Alexei N. Baranov, Jean-Baptiste Rodriguez, Eric Tournié, Laurent Cerutti   +9 more
openaire   +2 more sources