Results 141 to 150 of about 6,232 (203)

Long-wave infrared computational multispectral metasurface and spectral reconstruction method. [PDF]

Sci Rep
Wang S, Lu L, Zhu L.
europepmc   +1 more source

Advanced Mid-Infrared Sensors for Molecular Analysis. [PDF]

Anal Chem
da Silveira Petruci JF, da Silva Sousa D, Mizaikoff B.   +2 more
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InAsSb single crystal with compositional homogeneity grown in outer space. [PDF]

Natl Sci Rev
Huang J, Yin Z, Wu J, Pan X, Tang M, Liu X, Zhang X.   +6 more
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Tailoring in-Plane Permittivity Gradients by Shadow Mask Molecular Beam Epitaxy. [PDF]

Small Methods
Mukherjee S, Sitaram SR, Yu M, Wang X, Law S.   +4 more
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Synthesis of InAl-alloyed Ga₂O₃ nanowires for self-powered ultraviolet detectors by a CVD method. [PDF]

RSC Adv
Li B, Dong Z, Xu W, Li G, Yang X, Feng S, Feng W, Lu W.   +7 more
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Selective InAs/GaSb strained layer superlattice etch stop layers for GaSb substrate removal

Applied Physics A: Materials Science and Processing, 2012
This paper reports the use of an InAs/GaSb strained layer superlattice (SLS) as an etch stop layer for GaSb substrate removal with a BCl3/SF6 etch chemistry. Optimum chamber conditions were determined by measuring etch rates and selectivities for two types of superlattices.
Sanjay Krishna
exaly   +2 more sources

Au spreading on GaSb substrates

Materials Science and Engineering: B, 1993
Abstract Gold spreading on monocrystal substrates of GaSb during thermal annealing at temperatures ranging from 300 °C to 400 °C is studied. The spreading areas form a geometrical pattern related to the crystallographic structure of the GaSb substrates as observed under optical and electron microscopy. The peripheries of the spreading areas are along
S.S. Tan, A.G. Milnes
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Growth of GaSb on GaAs substrates

Journal of Crystal Growth, 1994
Abstract The initial growth of GaSb on GaAs substrates by atmospheric pressure metalorganic vapour phase epitaxy (MOVPE) has been investigated both in-situ and ex-situ. The in-situ technique used was quasi-elastic light scattering (QLS) and the ex-situ technique was atomic force microscopy (AFM) measurements.
R.M. Graham, A.C. Jones, N.J. Mason, S. Rushworth, L. Smith, P.J. Walker   +5 more
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Comparison of short period InAs/GaSb superlattices on GaSb and GaAs substrates

Science in China Series E: Technological Sciences, 2009
Type II superlattices (SLs) short period InAs(4ML)/GaSb(8ML) were grown by molecular-beam epitaxy on lattice-mismatched GaAs substrates and on GaSb substrates. A smooth GaSb epilayer was formed on GaAs substrates by inserting mulit-buffer layers including an interfacial misfit mode AlSb quantum dot layer and AlSb/GaSb superlattices smooth layer.
Jie Guo, HuiJuan Chen, WeiGuo Sun, RuiTing Hao, YingQiang Xu, ZhiChuan Niu   +5 more
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