Monolithically integrated InAsSb-based nBnBn heterostructure on GaAs for infrared detection [PDF]
, 2018 High operating temperature i nfrared photo detectors with multi -color function that are capable of monolithic integration are of increasing importance in developing the next generation of mid -IR imag e ...
Craig, Adam P. +5 more
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Interband Cascade Photonic Integrated Circuits on Native III-V Chip
Sensors, 2021 We describe how a midwave infrared photonic integrated circuit (PIC) that combines lasers, detectors, passive waveguides, and other optical elements may be constructed on the native GaSb substrate of an interband cascade laser (ICL) structure. The active
Jerry R. Meyer +6 more
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Nanoscale Research Letters, 2018 In the present work, we report on the in-plane electrical transport properties of midwave (MWIR) and longwave infrared (LWIR) InAs/GaSb type-II superlattices (T2SLs) grown by molecular beam epitaxy (MBE) system on GaAs (001) substrate.
D. Benyahia +7 more
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Ballistic electron emission microscopy spectroscopy study of AlSb and InAs/AlSb superlattice barriers [PDF]
, 1998 Due to its large band gap, AlSb is often used as a barrier in antimonide heterostructure devices. However, its transport characteristics are not totally clear. We have employed ballistic electron emission microscopy (BEEM) to directly probe AlSb barriers
Cheng, X.-C., McGill, T. C.
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Effect of substrate orientation on band structure of bulk III-V semiconductors
AIP Advances, 2022 We present a detailed theory of the effects of crystal orientation on the properties of semiconductors. Our formalism allows us to study arbitrary crystallographic orientations of various compound semiconductors within any band model and crystal symmetry.
Marta Gladysiewicz, M. S. Wartak
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Band gap reduction in GaNSb alloys due to the anion mismatch [PDF]
, 2005 The structural and optoelectronic properties in GaNxSb1–x alloys ...
Ashley, T. +10 more
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Demonstration of HOT photoresponse of MWIR T2SLs InAs/InAsSb photoresistors [PDF]
Bulletin of the Polish Academy of Sciences: Technical Sciences, 2019 We report on the photoresponse of mid-wavelength infrared radiation (MWIR) type-II superlattices (T2SLs) InAs/InAsSb high operating temperature (HOT) photoresistor grown on GaAs substrate.
K. Michalczewski +3 more
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Type II superlattices for infrared detectors and devices [PDF]
, 1991 Superlattices consisting of combinations of III-V semiconductors with type II band alignments are of interest for infrared applications because their energy gaps can be made smaller than those of any 'natural' III-V compounds.
Chow, D. H. +4 more
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GaSb-based integrated lasers and photodetectors on a silicon-on-insulator waveguide circuit for sensing applications in the shortwave infrared [PDF]
, 2012 We report our results on GaSb photodiodes and lasers integrated on a Silicon-On-Insulator waveguide circuit. The photodiodes operate at room temperature with 0.4A/W responsivity for grating-assisted coupling and >1 A/W for an evanescent design.
Cerutti, L +5 more
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Preepitaxial substrate treatment of GaSb for liquid phase technology homoepitaxial growth [PDF]
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2008 The results of investigation to find out the optimal conditions of preepitaxial GaSb substrate treatment by chemical etching in inorganic acid mixes are offered.
Andronova О. V., Kurak V. V.
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