Results 31 to 40 of about 6,232 (203)
Tunnel switch diode based on AlSb/GaSb heterojunctions [PDF]
, 2000 We report on tunnel switch diodes based on AlSb barriers and GaSb p–n junctions grown by molecular beam epitaxy. These were the devices with thyristor like switching in the GaSb/AlSb system.
Barton, M. A. +4 more
core +1 more source
East European Journal of Physics, 2023 The paper studies the properties of surface and near-surface region of a single crystalline silicon sample doped with atoms of Ga (AIII) and Sb (BV). n-type single-crystal Si wafers were chosen as substrates, and samples were size of 8×10×0.5 mm3.
Xalmurat M. Iliyev +7 more
doaj +1 more source
High mobility back-gated InAs/GaSb double quantum well grown on GaSb substrate
Applied Physics Letters, 2015 We report a backgated InAs/GaSb double quantum well device grown on GaSb substrate. The use of the native substrate allows for high materials quality with electron mobility in excess of 500 000 cm2/Vs at sheet charge density of 8 × 1011 cm−2 and approaching 100 000 cm2/Vs near the charge neutrality point.
Binh-Minh Nguyen +4 more
openaire +2 more sources
AIP Advances, 2015 Lightly doped n-type GaSb substrates with p-type GaSb buffer layers are the preferred templates for growth of InAs/InGaSb superlattices used in infrared detector applications because of relatively high infrared transmission and a close lattice match to ...
W. C. Mitchel +5 more
doaj +1 more source
Growth of InAs0.32Sb0.68 on GaAs using a thin GaInSb buffer and strain superlattice layers
AIP Advances, 2021 We report on the growth of an InAs0.32Sb0.68 layer on (001) GaAs substrates. The lattice mismatch strain between the InAs0.32Sb0.68 layer and the GaAs substrate was accommodated using a thin 50–100 nm Ga0.35In0.65Sb buffer with interfacial misfit (IMF ...
Kian Hua Tan +3 more
doaj +1 more source
Demonstration of MOCVD-Grown Long-Wavelength Infrared InAs/GaSb Superlattice Focal Plane Array
IEEE Access, 2021 High-performance InAs/GaSb type-II superlattice infrared detectors and focal plane arrays (FPAs) are normally grown by molecular beam epitaxy (MBE).
Yan Teng +11 more
doaj +1 more source
Multispectral mid-infrared light emitting diodes on a GaAs substrate [PDF]
, 2017 We have designed, simulated, and experimentally demonstrated four-colour mid-infrared (mid-IR) Light Emitting Diodes (LEDs) integrated monolithically into a vertical structure on a semi-insulating GaAs substrate.
Aziz, Mohsin +6 more
core +1 more source
Engineering Proceedings, 2023 Recently, there has been significant interest in type-II superlattice (T2SL) infrared detectors based on both InAs/GaSb and InAs/InAsSb material systems, and fully operating devices have been presented in the mid- (MWIR) and long-wavelength (LWIR ...
Kacper Matuszelański +4 more
doaj +1 more source
Weak antilocalization in quasi-two-dimensional electronic states of epitaxial LuSb thin films [PDF]
, 2019 Observation of large non-saturating magnetoresistance in rare-earth monopnictides has raised enormous interest in understanding the role of its electronic structure.
Brown-Heft, Tobias L. +12 more
core +3 more sources
Design of a high contrast grating GaSb-based VCSEL integrated on silicon-on-insulator [PDF]
, 2013 We present a GaSb-VCSEL concept using SOI-based HCGs as highly reflective mirrors. The optical properties of two different grating designs are simulated using RCWA.
Roelkens, Günther +2 more
core +1 more source