Results 41 to 50 of about 6,232 (203)

In-situ Reflectance Monitoring of GaSb Substrate Oxide Desorption [PDF]

Journal of Crystal Growth, 2000
The use of specular reflectance to monitor GaSb substrate oxide desorption in-situ is reported. Substrates were loaded into the organometallic vapor phase epitaxy reactor either as-received (epi-ready) or after receiving a solvent degrease, acid etch and rinse. A variety of surface preparations and anneal conditions were investigated.
Vineis, C.J., Wang, C.A., Jensen, K.F.
openaire   +3 more sources

Near-bandgap wavelength-dependent studies of long-lived traveling coherent longitudinal acoustic phonon oscillations in GaSb/GaAs systems

, 2007
We report first studies of long-lived oscillations in optical pump-probe measurements on GaSb-GaAs heterostructures. The oscillations arise from a photogenerated coherent longitudinal acoustic phonon wave, which travels from the top surface of GaSb ...
A. Wood, I. Perakis, J. K. Furdyna, J. K. Miller, J. Qi, N. Tolk, T. V. Shahbazyan, X. Liu, Y. Xu, Y.-J. Cho   +9 more
core   +1 more source

Atomic hydrogen cleaning of GaSb(001) surfaces [PDF]

, 1996
We show that the (001) surface of GaSb can be cleaned efficiently by exposure to atomic hydrogen at substrate temperatures in the range 400–470 °C. This treatment removes carbon and oxygen contamination, leaving a clean, ordered surface with a symmetric (
Bell, Gavin R., McConville, C. F. (Chris F.)   +1 more
core   +1 more source

Band-edge diagrams for strained III-V semiconductor quantum wells, wires, and dots

, 2005
We have calculated band-edge energies for most combinations of zincblende AlN, GaN, InN, GaP, GaAs, InP, InAs, GaSb and InSb in which one material is strained to the other.
Pistol, M. -E., Pryor, C. E.
core   +1 more source

Nano-porosity in GaSb induced by swift heavy ion irradiation [PDF]

, 2016
Nano-porous structures form in GaSb after ion irradiation with 185 MeV Au ions. The porous layer formation is governed by the dominant electronic energy loss at this energy regime.
Afra, B, Araujo, L. L, Bierschenk, T, Ewing, R. C, Giulian, R, Kluth, P, Lei, W, Li, W, Ridgway, M. C, Rodriguez, M. D, Schnohr, C. S, Sullivan, James, Weed, R   +12 more
core   +1 more source

Structural and Optical Properties of InAsSbBi Grown by Molecular Beam Epitaxy on Offcut GaSb Substrates

Photonics, 2021
Three InAsSbBi samples are grown by molecular beam epitaxy at 400 °C on GaSb substrates with three different offcuts: (100) on-axis, (100) offcut 1° toward [011], and (100) offcut 4° toward [011].
Rajeev R. Kosireddy, Stephen T. Schaefer, Marko S. Milosavljevic, Shane R. Johnson   +3 more
doaj   +1 more source

Structural, Optical and Electrical Characterizations of Midwave Infrared Ga-Free Type-II InAs/InAsSb Superlattice Barrier Photodetector

Photonics, 2020
In this paper, a full set of structural, optical and electrical characterizations performed on midwave infrared barrier detectors based on a Ga-free InAs/InAsSb type-II superlattice, grown by molecular beam epitaxy (MBE) on a GaSb substrate, are reported
U. Zavala-Moran, M. Bouschet, J. P. Perez, R. Alchaar, S. Bernhardt, I. Ribet-Mohamed, F. de Anda-Salazar, P. Christol   +7 more
doaj   +1 more source

Electric fields and valence band offsets at strained [111] heterojunctions

, 1997
[111] ordered common atom strained layer superlattices (in particular the common anion GaSb/InSb system and the common cation InAs/InSb system) are investigated using the ab initio full potential linearized augmented plane wave (FLAPW) method.
%N. Tit, A. Continenza, A. Continenza, A. Dal Corso, A. J. Freeman, C. G. Van de Walle, C. Ohler, C. Van de Walle, D. L. Smith, H. J. F. Jansen, I. Gorczyca, J. F. Nye, L. Hedin, M. Weinert, P. Hohenberg, P. J. Harshman, R. M. Martin, R. M. Martin, S. Baroni, S. De Gironcoli, S. Froyen, S. Massidda, S. Picozzi, S. Picozzi, S. Picozzi, Su-Huai Wei, Su-Huai Wei, W. A. Harrison, W. Kohn, X. Zhu   +29 more
core   +1 more source

INFLUENCE OF THE SUBSTRATE TEMPERATURE ON OPTICAL AND STRUCTURAL PROPERTIES OF GaSb:Ni ALLOYS

Momento, 2018
GaSb:Ni ternary alloys thin films were deposited via sputtering method (DC magnetron Co{Sputtering) varying the substrate temperature (Ts). From spectra transmittance measurements and X-ray diffraction (XRD) were obtained the optical constants and ...
Heiddy P. Quiroz, Anderson Dussan
doaj   +1 more source

Compositional analysis of InAs-GaAs-GaSb heterostructures by low-loss electron energy loss spectroscopy [PDF]

, 2013
As an alternative to Core-Loss Electron Energy Loss Spectroscopy, Low-Loss EELS is suitable for compositional analysis of complex heterostructures, such as the InAs-GaAs-GaSb system, since in this energy range the edges corresponding to these elements ...
A G Taboada, A M Beltrán, A M Sánchez, Egerton R F, J M Ripalda, M H Gass, S I Molina, Sánchez A M, T Ben   +8 more
core   +2 more sources