Results 51 to 60 of about 6,232 (203)
Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference
Advanced Electronic Materials, EarlyView.This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho +6 more
wiley +1 more source
Avalanche Photodetector Based on InAs/InSb Superlattice
Quantum Reports, 2020 This work demonstrates a mid-wavelength infrared InAs/InSb superlattice avalanche photodiode (APD). The superlattice APD structure was grown by molecular beam epitaxy on GaSb substrate.
Arash Dehzangi +3 more
doaj +1 more source
ULTRARAM: A Low‐Energy, High‐Endurance, Compound‐Semiconductor Memory on Silicon
Advanced Electronic Materials, 2022 ULTRARAM is a nonvolatile memory with the potential to achieve fast, ultralow‐energy electron storage in a floating gate accessed through a triple‐barrier resonant tunneling heterostructure.
Peter D. Hodgson +5 more
doaj +1 more source
Topological Materials and Related Applications
Advanced Electronic Materials, EarlyView.This review covers topological materials—including topological insulators, quantum valley Hall and quantum spin Hall insulators, and topological Weyl and Dirac semimetals—as well as their most recent advancements in fields such as spintronics, electronics, photonics, thermoelectrics, and catalysis.
Carlo Grazianetti +9 more
wiley +1 more source
X-ray photoelectron spectroscopy investigation of the mixed anion GaSb/InAs heterointerface [PDF]
, 1993 X-ray photoelectron spectroscopy has been used to measure levels of anion cross-incorporation and to study interface formation for the mixed anion GaSb/lnAs heterojunction.
Collins, D. A. +3 more
core +1 more source
Emergent Spin Hall Quantization and High‐Order van Hove singularities in Square‐Octagonal MA2Z4
Advanced Physics Research, EarlyView.Square‐octagonal MA2Z4 (M = Mo/W, A = Si/Ge, Z = pnictogen) monolayers are predicted to realize quantum spin Hall insulators with nearly quantized spin Hall conductivity enabled by an emergent spin U(1) quasi‐symmetry. Materials with Z = As and Sb host quasi‐flat bands with high‐order van Hove singularities near the Fermi level, making them promising ...
Rahul Verma +3 more
wiley +1 more source
Micromachines, 2021 Reflectance anisotropy spectroscopy (RAS), which was originally invented to monitor epitaxial growth, can—as we have previously shown—also be used to monitor the reactive ion etching of III/V semiconductor samples in situ and in real time, as long as the
Guilherme Sombrio +5 more
doaj +1 more source
Interband cascade lasers with room temperature threshold current densities below 100 A/cm(2) [PDF]
, 2013 Interband Cascade Lasers (ICLs) with threshold current densities below 100 A/cm(2) in pulsed operation at room temperature are presented. The laser structure comprises 10 active stages of 41 nm length, each stage containing a W-quantum well active region
Höfling, Sven +2 more
core +2 more sources
Nanoscale Ripples at the Surface of SrTiO3 Irradiated by a Broad Low‐Energy Ar+ (7 keV) Ion Beam
Small, EarlyView.Broad Ar ion beam irradiation creates self‐organized ripple nanostructures on oxide surfaces. A schematic illustrates the process, while cross‐sectional STEM imaging captures the ripple morphology. Complementary elemental mapping by EELS highlights nanoscale chemical variations, linking ion‐beam nanostructuring with structural and compositional ...
Mohammad S. Jamal +9 more
wiley +1 more source
New Journal of Physics, 2021 Understanding the carrier dynamics of nanostructures is the key for development and optimization of novel semiconductor nano-devices. Here, we study the optical properties and carrier dynamics of (InGa)(AsSb)/GaAs/GaP quantum dots (QDs) by means of non ...
Petr Steindl +4 more
doaj +1 more source