Results 61 to 70 of about 6,232 (203)
Advanced Energy and Sustainability Research, Volume 7, Issue 3, March 2026.This review examines the evolution and current state of concentrated photovoltaic systems, focusing on materials, manufacturing pathways, and thermal management challenges. Advanced cooling techniques and emerging applications are assessed alongside recent digital integration strategies. Through linking performance gains with practical limitations, the
Abdul Ghani Olabi +7 more
wiley +1 more source
AIP Advances, 2020 A high operating temperature mid-wavelength infrared pBn photodetector based on the type-II InAs/InAsSb superlattice on a GaSb substrate has been demonstrated.
Donghai Wu +3 more
doaj +1 more source
Ultrathin compound semiconductor on insulator layers for high performance nanoscale transistors
, 2010 Over the past several years, the inherent scaling limitations of electron devices have fueled the exploration of high carrier mobility semiconductors as a Si replacement to further enhance the device performance.
A Javey +44 more
core +1 more source
Magnetotunneling in a Two-Dimensional Electron-Hole System Near Equilibrium [PDF]
, 2000 We have measured the zero-bias differential tunneling conductance of InAs/AlSb/GaS b/AlSb/InAs heterostructures at low temperatures (1.7K < T < 60K) and unde r a magnetic field at various angles with the heterostructure's interfaces.
González, E. M., Lin, Y., Mendez, E. E.
core +3 more sources
Mid‐Infrared Integrated Photonics: Material Platforms and Emerging Applications
Laser &Photonics Reviews, Volume 20, Issue 6, 18 March 2026.Mid‐infrared (MIR) integrated photonics enables advanced chemical and biological sensing through the unique absorption features of molecules in the 2–20 µm range. This review highlights recent material advances such as chalcogenide glasses, silicon, and graphene and explores MIR applications in environmental monitoring, medical diagnostics ...
Muhammad Ali Butt +2 more
wiley +1 more source
Pre-epitaxial treatment of GaSb substrates for liquid-phase growth of homoepitaxial layers
Технологія та конструювання в електронній апаратурі, 2008 The results of investigation to find out the optimal conditions of pre-epitaxial GaSb substrate treatment by chemical etching in inorganic acid mixes are offered.
О. V. Andronova, V. V. Kurak
doaj
Sensor of hydrostatic pressure based on gallium antimonide microcrystals
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2015 Currently, silicon and germanium, the most common materials in the production of discrete semiconductor devices and integrated circuits, do not always meet all the requirements to the sensing elements of mechanical quantities sensors.
A. A. Druzhinin +3 more
doaj +1 more source
Temperature-Dependent X-ray Diffraction Measurements of Infrared Superlattices Grown by MBE
Crystals, 2016 Strained-layer superlattices (SLSs) are an active research topic in the molecular beam epitaxy (MBE) and infrared focal plane array communities. These structures undergo a >500 K temperature change between deposition and operation.
Charles J. Reyner +4 more
doaj +1 more source
P-n junctions formed in gallium antimonide [PDF]
, 1970 Vapor phase deposition process forms a heavily doped n-region on a melt-grown p-type gallium antimonide substrate. HCl transports gallium to the reaction zone, where it combines with antimony hydride and the dopant carrier, hydrogen telluride ...
Clough, R., Richman, D., Tietjen, J.
core +1 more source
Unraveling Band‐Tail Effects on Temperature‐Dependent Emission in GaAsBi via Photoluminescence
Advanced Science, Volume 13, Issue 9, 13 February 2026.An innovative dual‐spectroscopy approach resolves the debate over GaAsBi's emission temperature sensitivity. By combining temperature‐dependent photoluminescence and transmission spectroscopy, the method decouples the contributions of band‐tail states from the intrinsic band‐edge behavior.
Bing Yan +6 more
wiley +1 more source