Results 71 to 80 of about 6,232 (203)

Enhancing Stability at High Temperature in GaSb‐Based Phase‐Change Materials via Carbon Introduction

physica status solidi (RRL) – Rapid Research Letters, Volume 20, Issue 2, February 2026.
Introducing carbon in GaSb alloys boosts thermal stability of the amorphous phase. Crystallization temperature rises, grains shrink, Sb segregation drops, and compressive strain forms. Amorphous phase stays stable to ∼270°C, with 10 times higher electrical contrast and low‐density change (<4%), making these alloys promising for high‐temperature, high ...
Jacopo Remondina, Gabriele Navarro, Magali Putero   +2 more
wiley   +1 more source

Interface Dependent Coexistence of Two‐Dimensional Electron and Hole Gases in Mn‐doped InAs/GaSb

Advanced Materials Interfaces
The interface of common III‐V semiconductors InAs and GaSb can be utilized to realize a two‐dimensional (2D) topological insulator state. The 2D electronic gas at this interface can yield Hall quantization from coexisting electrons and holes.
Logan Riney, Seul‐Ki Bac, Maksym Zhukovskyi, Tatyana Orlova, Shelby S. Fields, Jiashu Wang, Tommy Kotte, David Graf, Steven P. Bennett, Xinyu Liu, Badih A. Assaf   +10 more
doaj   +1 more source

Correlated X‐Ray and Electron Microscopies of a Single Biphasic GaAs Nanowire

Small Methods, Volume 10, Issue 3, 9 February 2026.
Nano‐focused scanning X‐ray diffraction microscopy at a synchrotron light source, combined with transmission electron microscopy, reveals a clear correlation between the nanoscale distribution of cubic and hexagonal segments in a GaAs nanowire with subtle variations in inter‐reticular spacing, bending, and twisting.
Thomas Dursap, Tao Zhou, Maxime Dupraz, Stéphane Labat, Olivier Thomas, Niels Fardeau, Philippe Regreny, Michel Gendry, Solène Brottet, Nicholas P. Blanchard, Martin V. Holt, Marie‐Ingrid Richard, Alexandru Danescu, José Penuelas, Matthieu Bugnet   +14 more
wiley   +1 more source

Strain‐Engineered Monolithic Multi‐Band LEDs for Simultaneous Short‐Wavelength and Mid‐Wavelength Infrared Emission

Advanced Materials, Volume 38, Issue 3, 13 January 2026.
A monolithic multi‐band LED capable of simultaneously emitting short‐ and mid‐wavelength infrared light is demonstrated, enabled by Sb doping–driven strain engineering that achieves balanced strain compensation and coherent epitaxy in the quantum wells.
Hee Joon Jung, Dongwan Kim, Phuc Dinh Nguyen, Sangjun Kang, Jiyeon Jeon, Thu Trang Thi Bui, Jungwon Yoon, Minkyeong Kim, Changsug Lee, Robert Sinclair, In‐Ho Lee, Byong Sun Chun, Sang Jun Lee   +12 more
wiley   +1 more source

On‐Chip Perovskite Coolers

Advanced Materials Technologies, Volume 11, Issue 1, 8 January 2026.
Scaling of 3D‐integrated electronics exacerbates thermal bottlenecks, motivating solid‐state on‐chip cooling beyond convection and immersion. This perspective reviews optical refrigeration, electroluminescent cooling, and thermoelectrics for localized, vibration‐free heat removal.
Huilong Liu, Manaswini Bhamidimarri, Shubhra Bansal   +2 more
wiley   +1 more source

Enhanced THz Emission and Exciton Transfer in Monolayer MoS2/GaAs Heterostructures

Advanced Photonics Research, Volume 7, Issue 1, January 2026.
This study demonstrates enhanced terahertz (THz) emission from a hybrid structure combining monolayer MoS2 with low‐temperature‐grown GaAs. The mixed‐dimensional van der Waals heterostructure shows a 15% increase in THz output and improved optical conductivity, driven by efficient exciton transfer and nonlinear optical effects, offering a new route for
C. Abinash Bhuyan, Anil K. Chaudhary, Kishore K. Madapu, P. Naveen Kumar, Sandip Dhara   +4 more
wiley   +1 more source

External luminescence and photon recycling in near-field thermophotovoltaics

, 2017
The importance of considering near-field effects on photon recycling and spontaneous emission in a thermophotovoltaic device is investigated. Fluctuational electrodynamics is used to calculate external luminescence from a photovoltaic cell as a function ...
DeSutter, John, Francoeur, Mathieu, Vaillon, Rodolphe   +2 more
core   +3 more sources

Lithium and Vanadium Intercalation into Bilayer V2Se2O: Ferrimagnetic–Ferroelastic Multiferroics and Anomalous and Spin Transport

Advanced Science, Volume 13, Issue 5, 27 January 2026.
Li‐ and V‐intercalated V2Se2O bilayers possess intralayer ferrimagnetic and interlayer ferromagnetic orders, alongside ferroelasticity, in‐plane uniaxial magnetic anisotropy, half‐metal/enhanced spin splitting, the anomalous Hall effect, giant magnetoresistance, tunneling magnetoresistance, near‐perfect spin filtering effect, spin Seebeck effect, and ...
Long Zhang, Yuxin Liu, Junfeng Ren, Guangqian Ding, Xiaotian Wang, Guangxin Ni, Guoying Gao, Zhenxiang Cheng   +7 more
wiley   +1 more source

Structural anisotropy in Sb thin films

APL Materials
Sb thin films have attracted wide interest due to their tunable band structure, topological phases, high electron mobility, and thermoelectric properties.
Pradip Adhikari, Anuradha Wijesinghe, Anjali Rathore, Timothy Jinsoo Yoo, Gyehyeon Kim, Sinchul Yeom, Hyoung-Taek Lee, Alessandro R. Mazza, Changhee Sohn, Hyeong-Ryeol Park, Mina Yoon, Matthew Brahlek, Honggyu Kim, Joon Sue Lee   +13 more
doaj   +1 more source

Perfect Andreev Reflection of Helical Edge Modes in InAs/GaSb Quantum Wells

, 2011
We present an experimental study of inverted InAs/GaSb composite quantum wells in the hybridization regime and contacted by superconducting electrodes.
A. F. Andreev, Gerard Sullivan, Ivan Knez, Rui-Rui Du   +3 more
core   +1 more source