Results 81 to 90 of about 6,232 (203)

Transverse‐Electric Cherenkov Radiation for TeV‐Scale Particle Detection

Advanced Science, Volume 13, Issue 1, 5 January 2026.
Finite refractive indices of naturally existing materials place a fundamental ceiling on the momentum of detectable particles in traditional Cherenkov detectors. This work demonstrates transverse‐electric graphene plasmon Cherenkov radiation, breaking the momentum barrier for particle detection beyond the TeV scale with exceptional robustness and ...
Zhixiong Xie, Xiao Lin, Song Zhu, Chunyu Huang, Yu Luo, Hao Hu   +5 more
wiley   +1 more source

Improved Electron Transport Properties in InSb/Ga0.22In0.78Sb Composite Channel HEMT Structures

physica status solidi (a), Volume 223, Issue 2, January 2026.
The effectiveness of double‐sided Te δ‐doping and engineered buffer structure consisting of GaSb buffer and AlInSb‐graded buffer is investigated in InSb/Ga0.22In0.78 Sb composite channel HEMTs. The degree of threading dislocation suppression is quantitatively analyzed using a pair‐annihilation model.
Tatsuhisa Oba, Tomoki Jinnai, Reo Ebihara, Wataru Nakajima, Ryuto Machida, Issei Watanabe, Yoshimi Yamashita, Shinsuke Hara, Akifumi Kasamatsu, Akira Endoh, Hiroki I. Fujishiro   +10 more
wiley   +1 more source

Toward thin GaSb Buffer Layers Grown on On‐Axis (001) Silicon by Molecular Beam Epitaxy

Advanced Physics Research
The monolithic integration of III‐Vs on Silicon (Si) is of great interest for the development of active photonic integrated circuits (PICs). The main challenge is to achieve a high‐quality epitaxy of the III‐V on the Si substrate, as the differences ...
A. Gilbert, M. Ramonda, G. Patriarche, E. Tournié, J.‐B. Rodriguez   +4 more
doaj   +1 more source

Electron Channeling Contrast Imaging for the Characterization of Dislocations in III−V Thin Films on Silicon (001)

physica status solidi (a), Volume 223, Issue 2, January 2026.
Defect characterization plays a crucial role in semiconductor research, yet the development of fast, cheap, and nondestructive tools remains challenging. This work applies electron channeling contrast imaging (ECCI) to III–V thin films on silicon, examining beam parameters and diffraction conditions.
Laura Monge‐Bartolome, Paula Mouriño Miñambres, Alicia Peiro Codoñer, Miguel Sinusia Lozano, Zhao Yan, Ivan Garcia Vara, Thierry Baron, Qiang Li, Víctor J. Gómez   +8 more
wiley   +1 more source

Epitaxial growth of Ge1−xSnx thin film with Sn composition of 50% and possibility of Ge–Sn ordered bonding structure formation

Applied Physics Express
We examined the epitaxial growth of Ge _1− _x Sn _x thin film with x ∼ 0.50 on GaSb(111) substrate using a low-temperature MBE. X-ray diffraction and Raman scattering spectroscopy analyses revealed that the Ge _1− _x Sn _x thin film with x ∼ 0.50 with no
Shigehisa Shibayama, Kaito Shibata, Mitsuo Sakashita, Masashi Kurosawa, Osamu Nakatsuka   +4 more
doaj   +1 more source

V-Shaped InAs/Al0.5Ga0.5Sb Vertical Tunnel FET on GaAs (001) Substrate With I $_{\text {ON}}=\text {433}\,\,\mu$ A. $\mu$ m $^{-\text {1}}$ at V $_{\text {DS}}= \text {0.5}$ V

IEEE Journal of the Electron Devices Society, 2017
We report on the fabrication of a near broken InAs/Al0.5Ga0.5Sb vertical TUNNEL field effect transistor (TFET). The epitaxial structure is grown on a GaAs (001) substrate thanks to large mismatch accommodation at the GaSb/GaAs interface.
Vinay Kumar Chinni, Mohammed Zaknoune, Christophe Coinon, Laurence Morgenroth, David Troadec, Xavier Wallart, Ludovic Desplanque   +6 more
doaj   +1 more source

Mid‐Infrared Free‐Space Optical Communications: Technologies, Demonstrations and Future Directions

IET Optoelectronics, Volume 20, Issue 1, January/December 2026.
Free‐space optical (FSO) communication is increasingly extending beyond the near‐infrared to the mid‐wave infrared (MWIR) and long‐wave infrared (LWIR) regions, which offer reduced turbulence, scattering and absorption for more robust links. This review summarises recent advances in MWIR/LWIR FSO technologies, including quantum cascade lasers, lithium ...
Darja Cirjulina, Zhuoyan Zhang, Abdul Hayee, Armands Ostrovskis, Richard Schatz, Hamza Dely, Yan‐Ting Sun, Toms Salgals, Sandis Spolitis, Vjaceslavs Bobrovs, Lu Zhang, Djamal Gacemi, Angela Vasanelli, Carlo Sirtori, Xianbin Yu, Oskars Ozolins, Xiaodan Pang   +16 more
wiley   +1 more source

Photoluminescence Properties of Type‐II GaSb/GaAs Quantum Rings

Advanced Photonics Research, Volume 6, Issue 12, December 2025.
This study examines the magneto‐optical properties of GaSb/GaAs quantum rings (QRs) using photoluminescence spectroscopy. Recombination dynamics in single‐ and ten‐layer structures are analyzed through activation energy extraction, optical absorption profiling, and observation of a strong excitation‐induced blue shift. Carrier lifetime is also increase
Shumithira Gandan, Anna Musiał, Wojciech Rudno‐Rudziński, Marek G. Mikulicz, Denise Montesdeoca, Michael Schmidt, Juan S. D. Morales, Andrew J. Marshall, Anthony Krier, Peter J. Carrington, Grzegorz Sęk   +10 more
wiley   +1 more source

A Study of Quantum dots of GaSb

Journal of Mathematical and Fundamental Sciences, 2019
. Quantum Dots is a nano structured materials, which is an interesting object for fundamental study as well as for applications. Quantum Dots has been used for optoelectronic devices, such as fast detectors and for lasers.
M. Barmawi, Sugianto Sugianto, R.A. Sani, Euis Sustini, P. Arifin, M. Budiman   +5 more
doaj  

Strain-Balanced InAs/AlSb Type-II Superlattice Structures Growth on GaSb Substrate by Molecular Beam Epitaxy. [PDF]

Materials (Basel), 2023
Marchewka M, Jarosz D, Ruszała M, Juś A, Krzemiński P, Płoch D, Maś K, Wojnarowska-Nowak R.   +7 more
europepmc   +1 more source