Results 181 to 190 of about 216,668 (268)

Laser‐Assisted Phase Engineering of 2D MoS2 for Efficient Solution‐Processed Electronics

Advanced Materials, EarlyView.
Here, local laser‐assisted phase transition from solution‐processed phase‐pure 1T′ to 2H MoS2 is shown to critically depend on the irradiation atmosphere. While processing in air leads to damaged insulating regions, inert conditions yield semiconducting 2H domains, enabling direct field‐effect transistor patterning with optimized lateral 1T′‐2H MoS2 ...
Anna Zhuravlova, Minjuan Li, Osamah Alharbi, Yeonsu Jeong, Bin Han, Lei Gao, Mischa Bonn, Mario Lanza, Sheng Yang, Antonio Gaetano Ricciardulli, Paolo Samorì   +10 more
wiley   +1 more source

Tunable magnons in a dual-gated 2D antiferromagnet. [PDF]

Nat Commun
Stetzuhn N, Kumar AM, Kovalchuk S, Yagodkin D, Simon L, Mañas-Valero S, Coronado E, Taniguchi T, Watanabe K, Gill D, Sharma S, Brouwer PW, von Korff Schmising C, Eisebitt S, Bolotin KI.   +14 more
europepmc   +1 more source

Switchable Magnonic Crystals Based on Spin Crossover/CrSBr Heterostructures

Advanced Materials, EarlyView.
Multiscale modeling is employed to investigate the functionality of a light‐controlled, tunable magnonic crystal based on spin‐crossover Fe‐pz molecules integrated with a monolayer of CrSBr. Ab initio simulations confirm that the molecules remain functional on the CrSBr surface, while a semiclassical elastic model demonstrates that light‐induced ...
Andrei Shumilin, Sourav Dey, Denisa Coltuneac, Laurentiu Stoleriu, José J. Baldoví   +4 more
wiley   +1 more source

Suppression of Interface Traps and Improved Breakdown in Recessed-Gate AlGaN/GaN MISHEMTs Using Low-Temperature Nitrogen Passivation. [PDF]

ACS Omega
Chen HC, Liu AC, Lin CH, Chou SY, Chang TC, Kao TS, Kuo HC.   +6 more
europepmc   +1 more source

Monolithic 3D‐Integrated All‐Solid Ion‐Gated Carbon Nanotube Transistors With Tunable Ionic Conductance for Multi‐Timescale Reservoir Computing

Advanced Materials, EarlyView.
A dual‐timescale reservoir based on monolithically 3D (M3D)‐integrated CNT solid ion‐gated transistors is demonstrated. Tunable ionic dynamics and pulse‐engineered operation enable linear and symmetric synaptic updates. The M3D‐integrated array achieves robust temporal encoding and accurate classification of moving MNIST sequences, highlighting its ...
Haksoon Jung, Hanbin Cho, Yongwoo Lee, Seunghun Baek, Hyeongjun Kim, Yun Goo Ro, Hyunhyub Ko, Joonki Suh, Yong‐Young Noh, Jimin Kwon   +9 more
wiley   +1 more source

Research on unit circuits based on cathode modulated vacuum/air channel electron tube. [PDF]

Microsyst Nanoeng
Ying W, Lai Z, Xu H, Wang M, Ye Q, Fang Z, Liu J, Wang Y.   +7 more
europepmc   +1 more source

Space‐Time Coding Conformal Metasurfaces for Multifrequency Beam Steering and Shaping

Advanced Materials, EarlyView.
Space‐time coding conformal metasurfaces enable dynamic wave control on curved surfaces by combining programmable spatial patterns with temporal modulation. This study shows that a single conformal aperture can independently manipulate multiple frequency components, achieving multifunctional beam shaping and steering, with implications for ...
Filippo Pepe, Lei Zhang, Yi Ning Zheng, Xiao Qing Chen, Ivan Iudice, Giuseppe Castaldi, Marco Di Renzo, Tie Jun Cui, Vincenzo Galdi   +8 more
wiley   +1 more source

Channel and Body-Diode Conduction Characteristics in 4H-SiC MOSFETs Under Third-Quadrant Switching Conditions. [PDF]

Micromachines (Basel)
Huang X, Song Y, Zhong C, Wang Z.
europepmc   +1 more source

MOCVD‐Grown MoS2 Wafers as a Transfer‐Free Platform for Top‐Gate Devices via Dry Interface Engineering

Advanced Materials, EarlyView.
We reveal the electronic origin of hidden interfacial doping in monolayer MoS2 grown by MOCVD, identifying sulfate related and water like species as intrinsic donors. Through dry interface engineering approach, we demonstrate MOCVD‐grown single‐crystal MoS2 wafers as a transfer‐free platform for the reliable evaluation of intrinsic gate stacks and ...
Shuhong Li, Juiteng Chang, Keisuke Atsumi, Kosei Matsumoto, Itsuki Tanaka, Tomonori Nishimura, Kaito Kanahashi, Takahiro Nagata, Jun Nara, Yoshiki Sakuma, Emi Kano, Nobuyuki Ikarashi, Kosuke Nagashio   +12 more
wiley   +1 more source

Improved Threshold Voltage Stability of p-GaN Gate HEMTs Under Off-State Drain Stress Using p-NiO RESURF Terminal. [PDF]

Micromachines (Basel)
Pan J, Ye X, Jiang R, Miao A, Miao F, Mao Z, Peng Y, Guo H, Lei J.   +8 more
europepmc   +1 more source