Results 231 to 240 of about 523,548 (302)
Memristors offer tunable resistance and intrinsic instability, making them promising tunable noise sources. We propose a spiking‐rate‐programmable probabilistic neuron using a Ru/TaOx/Pt memristor, where resistance‐dependent noise enables frequency‐selective encoding.
Do Hoon Kim +8 more
wiley +1 more source
Wafer-scale 2D MoS<sub>2</sub> transistors with self-aligned angstrom gate length and nanometer channel length. [PDF]
Wang Z +11 more
europepmc +1 more source
Direct Growth of 2D Bilayers on Au(111) for Low‐Coercive Sliding Ferroelectricity
Controlled CVD growth of stacking‐defined bilayer ReS2 on Au(111) enables parallel‐stacked bilayers with intrinsic sliding ferroelectricity, a strong piezoelectric response, and an ultralow coercive voltage. Atomic‐resolution imaging and in situ measurements further reveal the decisive role of clean interfaces in achieving low‐barrier ferroelectric ...
Honglin Chen +7 more
wiley +1 more source
Selective Polarity Control of Metal Oxide Semiconductors for Complementary Logic Gates. [PDF]
Park DH +6 more
europepmc +1 more source
Micro‐topographical cues applied through temporally controlled microscale confinement improve the reproducibility, spatial organization, and neurosensory‐associated features of pluripotent stem cell‐derived inner ear organoids. Integration with a vascularized organoid platform further enables controlled investigation of vascular‐epithelial interactions
Harshita Sharma +15 more
wiley +1 more source
Autonomic-salience stability as a candidate Gate for awake low-dose ketamine: a systems neuroscience framework with a clinical anchor. [PDF]
Torii K, Jinno M.
europepmc +1 more source
Tailoring Symmetry Breaking in Engineered van der Waals Superlattices
We pioneer a scheme to tailor superpotentials in graphene based on intrinsic substrate electronic orders rather than twist angle. The resulting superpotential folds graphene's Dirac cones to either Γ$\Gamma$ or K‐points, leading to distinct symmetry behaviors.
Keda Jin +7 more
wiley +1 more source
Challenges, Power-Device Progress, and Emerging Harsh-Environment Applications for Ultrawide-Bandgap Diamond Semiconductors. [PDF]
Alshammari N, Rao MV, Li Q.
europepmc +1 more source

