Results 191 to 200 of about 110,193 (341)

High‐κ Perovskite‐Like Ternary Niobium Oxide Dielectrics for 2D Electronics

open access: yesAdvanced Materials, EarlyView.
High‐κ dielectrics are vital for scaled electronics. Here, a family of 2D high‐κ perovskite‐like ternary niobium oxides is synthesized via a molten salt‐assisted method. Their integration into FETs and logic gates reveals superior switching characteristics, providing a fresh material platform and new insights for the advancement of high‐performance 2D ...
Biao Zhang   +10 more
wiley   +1 more source

Dynamic Optical Lattices Through Conducting Polymer‐Gated Confinement

open access: yesAdvanced Materials, EarlyView.
The conducting polymer gate is incorporated into organic dielectric lattices to control the dynamic switching of nonlocal Mie resonances in the visible/NIR regions. The “closed gate” from oxidized PEDOT confines the light within dielectric nanocylinders and activates nonlocal Mie resonances, while the “opened gate” from reduced PEDOT facilitates ...
Dongqing Lin   +3 more
wiley   +1 more source

Materials and System Design for Self‐Decision Bioelectronic Systems

open access: yesAdvanced Materials, EarlyView.
This review highlights how self‐decision bioelectronic systems integrate sensing, computation, and therapy into autonomous, closed‐loop platforms that continuously monitor and treat diseases, marking a major step toward intelligent, self‐regulating healthcare technologies.
Qiankun Zeng   +9 more
wiley   +1 more source

Anomaly cancellation and conformality in quiver gauge theories

open access: hybrid, 2006
Edoardo Di Napoli, Paul H. Frampton
openalex   +1 more source

Designing Defect Structure and Interfacial Strain in an Epitaxial VN Bilayer Film by Tailoring N Concentration

open access: yesAdvanced Materials Interfaces, EarlyView.
The N concentration in an epitaxial VN bilayer is tailored from overstoichiometric V0.49N0.51 to understoichiometric V0.56N0.44. Based on ab initio, diffraction, and microscopy data, the overstoichiometric V0.49N0.51 layer contains V vacancies, N Frenkel pairs, and a high density of dislocations.
Marcus Hans   +7 more
wiley   +1 more source

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