High‐κ Perovskite‐Like Ternary Niobium Oxide Dielectrics for 2D Electronics
High‐κ dielectrics are vital for scaled electronics. Here, a family of 2D high‐κ perovskite‐like ternary niobium oxides is synthesized via a molten salt‐assisted method. Their integration into FETs and logic gates reveals superior switching characteristics, providing a fresh material platform and new insights for the advancement of high‐performance 2D ...
Biao Zhang +10 more
wiley +1 more source
Mixed gauge and anomaly mediation from new physics at 10 TeV [PDF]
Ken Hsieh, Markus A. Luty
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Dynamic Optical Lattices Through Conducting Polymer‐Gated Confinement
The conducting polymer gate is incorporated into organic dielectric lattices to control the dynamic switching of nonlocal Mie resonances in the visible/NIR regions. The “closed gate” from oxidized PEDOT confines the light within dielectric nanocylinders and activates nonlocal Mie resonances, while the “opened gate” from reduced PEDOT facilitates ...
Dongqing Lin +3 more
wiley +1 more source
On the Classification of Bosonic and Fermionic One-Form Symmetries in 2 + 1 d and 't Hooft Anomaly Matching. [PDF]
Balasubramanian M +2 more
europepmc +1 more source
Materials and System Design for Self‐Decision Bioelectronic Systems
This review highlights how self‐decision bioelectronic systems integrate sensing, computation, and therapy into autonomous, closed‐loop platforms that continuously monitor and treat diseases, marking a major step toward intelligent, self‐regulating healthcare technologies.
Qiankun Zeng +9 more
wiley +1 more source
Multi-element geochemical anomaly recognition applying geologically-constrained convolutional deep learning algorithm with Butterworth filtering of frequency domain information : Of frequency domain information. [PDF]
Sabbaghi H +2 more
europepmc +1 more source
Anomaly cancellation and conformality in quiver gauge theories
Edoardo Di Napoli, Paul H. Frampton
openalex +1 more source
Chiral Symmetry Breaking and Nonperturbative Scale Anomaly in Gauge Field Theories [PDF]
V. A. Miransky, V. P. Gusynin
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The N concentration in an epitaxial VN bilayer is tailored from overstoichiometric V0.49N0.51 to understoichiometric V0.56N0.44. Based on ab initio, diffraction, and microscopy data, the overstoichiometric V0.49N0.51 layer contains V vacancies, N Frenkel pairs, and a high density of dislocations.
Marcus Hans +7 more
wiley +1 more source

