Multipartite EPR-steering and entanglement in a cavity magnomechanical system through coherent feedback. [PDF]
Harraf H +4 more
europepmc +1 more source
Fast‐Responding O2 Gas Sensor Based on Luminescent Europium Metal‐Organic Frameworks (MOF‐76)
Luminescent MOF‐76 materials based on Eu(III) and mixed Eu(III)/Y(III) show rapid and reversible changes in emission intensity in response to O2 with very short response times. The effect is based on triplet quenching of the linker ligands that act as photosensitizers. Average emission lifetimes of a few milliseconds turn out to be mostly unaffected by
Zhenyu Zhao +5 more
wiley +1 more source
LiGaussOcc: Fully Self-Supervised 3D Semantic Occupancy Prediction from LiDAR via Gaussian Splatting. [PDF]
Wei Z, Huang T, Zhang F.
europepmc +1 more source
Equivalent Gaussian Measures with a Particularly Simple Radon-Nikodym Derivative [PDF]
Dale E. Varberg
openalex +1 more source
Gaussian Jacobsthal and Gaussian Jacobsthal Lucas numbers
In this study we define and study the Gaussian Jacob-sthal and Gaussian Jacobsthal Lucas numbers. We give generating functions, Binet formulas, explicit formulas and Q matrix of these numbers. We also present explicit combinatorial and determinantal expressions, study negatively subscripted numbers and give various identities. Similar to the Jacobsthal
Aşçı, Mustafa, Gürel, Eşref
openaire +4 more sources
Stochastically Generated Digital Twins of 3D Solid‐State Electrolyte Architecture
Digital Twins of random porous tape‐cast solid‐state battery architectures across µm to mm feature sizes from FIB‐SEM to X‐Ray µCT, respectively. Abstract Solid‐state lithium batteries (SSBs) have the potential to overcome conventional Li‐ion batteries in performance and safety.
Jonathan O'Neill +3 more
wiley +1 more source
Computed ECD spectral data for over 10,000 chiral organic small molecules. [PDF]
Long D +8 more
europepmc +1 more source
Gaussian beam distortion caused by saturable gain or loss [PDF]
William B. Bridges
openalex +1 more source
Steep‐Switching Memory FET for Noise‐Resistant Reservoir Computing System
We demonstrate the steep‐switching memory FET with CuInP2S6/h‐BN/α‐In2Se3 heterostructure for application in noise‐resistant reservoir computing systems. The proposed device achieves steep switching characteristics (SSPGM = 19 mV/dec and SSERS = 23 mV/dec) through stabilization between CuInP2S6 and h‐BN.
Seongkweon Kang +6 more
wiley +1 more source

