Results 81 to 90 of about 191,077 (277)

Spectrally Tunable 2D Material‐Based Infrared Photodetectors for Intelligent Optoelectronics

Advanced Functional Materials, EarlyView.
Intelligent optoelectronics through spectral engineering of 2D material‐based infrared photodetectors. Abstract The evolution of intelligent optoelectronic systems is driven by artificial intelligence (AI). However, their practical realization hinges on the ability to dynamically capture and process optical signals across a broad infrared (IR) spectrum.
Junheon Ha, Yingshan Ma, Yong Nam An, Sung‐Un An, Hyeon Hak Jung, Suvi‐Tuuli Varjamo, Jiwon Yoo, Junho Min, Hanvit Kim, Faisal Ahmed, Sang Hoon Chae, Young Min Song, Weiwei Cai, Tawfique Hasan, Zhipei Sun, Dong‐Ho Kang, Hyeon‐Jin Shin, Yunyun Dai, Hoon Hahn Yoon   +18 more
wiley   +1 more source

Trap‐Modified Inverted Organic Photodetectors via Layer‐by‐Layer Processing with Poly(N‐vinylcarbazole) Additives

Advanced Functional Materials, EarlyView.
Trap state engineering in inverted organic photodetectors (OPDs) is achieved via combined layer‐by‐layer (LbL) processing and poly(N‐vinylcarbazole) (PVK) incorporation. LbL reduces the trap density while PVK additives gradually shift trap states from shallow band‐edge to deep mid‐gap levels, tailoring the energy distribution.
Jingwei Yi, Yi Yang, Yusen Pei, Apurva Gadikar, Vahid Mahdikhah, Myratgeldi Kotyrov, Seung Hyun Kim, Kenan Gundogdu, Wei You, Harald Ade, Franky So   +10 more
wiley   +1 more source

Total Gaussian Curvature

AbstractIf we know a plane curve $$\gamma \colon [a,b]\to \mathbb {R}^2$$ γ : [ a , b ] → ℝ
Ulrich Pinkall, Oliver Gross
openaire   +1 more source

Structure–Transport–Ion Retention Coupling for Enhanced Nonvolatile Artificial Synapses

Advanced Functional Materials, EarlyView.
Nitrogen incorporation into the conjugated backbone of donor–acceptor polymers enables efficient charge transfer and deep ion embedding in organic electrochemical synaptic transistors (OESTs). This molecular‐level design enhances non‐volatile synaptic properties, providing a new strategy for developing high‐performance and reliable neuromorphic devices.
Donghwa Lee, Jinsung Kim, Sein Chung, Junho Sung, Chaeyeon Han, Eunho Lee   +5 more
wiley   +1 more source

Rational Device Design and Doping‐Controlled Performance in Fast‐Response π‐Ion Gel Transistors

Advanced Functional Materials, EarlyView.
π‐Ion gel transistors (PIGTs) achieve extraordinary transconductance and stability through device configuration optimization, high‐mobility conjugated polymer selection, and hole scavenger doping. The optimized PIGTs maintain performance on flexible substrates, enabling printed, fast‐response, and wearable electronics.
Masato Kato, Soh Kushida, Nafees Umar Draz, Dan Kyotani, Emanuel Smarsly, Kyota Yoshinaga, Wenhao He, Uwe H. F. Bunz, Kazuhiro Marumoto, Tatsuya Mori, Yohei Yamamoto   +10 more
wiley   +1 more source

Generalized Gaussian curvature flows related to the Orlicz Gaussian Minkowski problem

Advanced Nonlinear Studies
In this paper, we investigate two anisotropic Gaussian curvature flows. Through establishing the long-time existence and congergence for these two flows, we derive the existence results for the Orlicz-Gaussian Minkowski problem in both origin-symmetric ...
Liu Yannan, Peng Yuxin
doaj   +1 more source

Single‐Crystalline Lateral p‐SnS/n‐SnSe van der Waals Heterostructures by Vapor Transport Growth with In Situ Bi Doping

Advanced Functional Materials, EarlyView.
In‐situ doping during growth of SnSe and subsequent attachment of SnS produces high‐quality lateral pn‐heterojunctions between van der Waals semiconductors. Electron beam induced current measurements demonstrate electrically active pn‐junctions, paving the way for devices that harness charge separation at lateral interfaces in layered heterostructures.
Peter Sutter, Valerio Piazza, Pramod Ghimire, Anna Fontcuberta i Morral, Eli Sutter   +4 more
wiley   +1 more source

Biaxial Gaussian Beams, Hermite–Gaussian Beams, and Laguerre–Gaussian Vortex Beams in Isotropy-Broken Materials

Photonics
We have developed the paraxial approximation for electromagnetic fields in arbitrary isotropy-broken media in terms of the ray–wave tilt and the curvature of materials’ Fresnel wave surfaces.
Maxim Durach
doaj   +1 more source

Charge Transport in Ternary Charge‐Transfer Solid Solution Single Crystals

Advanced Functional Materials, EarlyView.
This study deconvolutes the roles of indirect (superexchange) and direct electronic coupling on charge transport in single crystals of an organic charge‐transfer molecular semiconductor (OSC). This model system elegantly demonstrates that structural defects introduced by chemical dopants play a significant role in the electronic performance ...
Jonathan C. Novak, Manikanta Makala, Edith L. MacKenzie, Veaceslav Coropceanu, Kimberly Agosto, Abigail A. Moravek, Oana D. Jurchescu, Ren A. Wiscons   +7 more
wiley   +1 more source

A best constant and the Gaussian curvature [PDF]

Proceedings of the American Mathematical Society, 1986
For axisymmetric f ∈ C ∞ ( S 2 ) f \in {C^\infty }({S^2}) we find conditions to make f f the scalar curvature of a metric pointwise conformal to the standard metric of
openaire   +2 more sources