Results 131 to 140 of about 1,315,232 (288)
Ag+‐mediated hydrothermal crystal engineering promotes preferential [hk1]‐oriented growth of Sb2Se3 via an ultrathin MoOx interlayer, improving crystallinity and suppressing non‐radiative recombination. The optimized Ag+ treatment photocathode delivers 24.7 mA cm−2 at 0 VRHE and improved stability, revealing an ion‐modulated route to high‐performance ...
Ziying Zhang +10 more
wiley +1 more source
Infrared Nanocrystals for Space Application: Hardness to Irradiations
This article investigates infrared HgTe nanocrystals under X‐ray and ion irradiation, revealing remarkable radiation hardness. It uncovers distinct degradation mechanisms and shows that the nanomaterial outperforms integrated electronics. The results position colloidal nanocrystals as promising candidates for resilient space and harsh‐environment ...
Alexandre Neyret +22 more
wiley +1 more source
This study demonstrates coherent control of 15N nuclear spins coupled to VB−${\text{V}}_{\text{B}}^{-}$ centers in isotope‐enriched hexagonal boron nitride. Selective addressing via spin‐state mixing enables Rabi driving, quantum gates, and coherence times exceeding 10 μs$\umu{\rm s}$.
Adalbert Tibiássy +6 more
wiley +1 more source
Structural Porosity and Low Mineral Density in Enamel Rods Drive Molar Incisor Hypomineralisation
This study uses advanced imaging modalities on multiple length scales to show that molar‐incisor hypomineralization does not present as a locally homogeneous pathology. Instead, microstructural defects, characterized through non‐mineralized, protein‐rich sheaths and an altered mineral structure in between prism rods, resulting in local differences in ...
Katharina Jähn‐Rickert +14 more
wiley +1 more source
Counterion Dependent Side‐Chain Relaxation Stiffens a Chemically Doped Thienothiophene Copolymer
Oxidation of a thienothiophene copolymer, p(g3TT‐T2), via different doping strategies and dopant molecules resulted in materials with similar oxidation levels and a high electrical conductivity of ≈100 S cm−1. However, mechanical properties varied significantly, with sub‐glass transition temperatures and elastic moduli spanning from –44°C to –3°C and ...
Mariavittoria Craighero +12 more
wiley +1 more source
Asymmetric Contact Engineering for Bottleneck‐Free Transport in 2D MoS2 Field‐Effect Transistor
Performance of 2D semiconductor transistors is limited by carrier transport bottlenecks arising from specific device geometries. By identifying this structural limitation, a bottleneck‐free asymmetric transistor architecture (BATA) is introduced to improve carrier transport.
Jinhyeok Pyo +10 more
wiley +1 more source
High Entropy Wide‐Bandgap Borates with Broadband Luminescence and Large Nonlinear Optical properties
High‐entropy rare‐earth borates exhibit excellent nonlinear optical and broadband luminescence properties arising from multi‐component doping, chemical disorder, increased configurational entropy, and increased lattice and electronic anharmonicity. This formulation enabled us to obtain a large, environmentally stable single crystal with 3X higher laser‐
Saugata Sarker +14 more
wiley +1 more source
This work provides a novel interpretation of the nitrate reduction mechanism on iron oxides (FeOx) by employing constant‐potential density functional calculations and reports the design and synthesis of a robust and high‐performance Fe3O4/Fe‐N4‐C catalyst with remarkable Faradaic efficiency, current density, and stability under practical reaction ...
Qiang Zhou +8 more
wiley +1 more source
Imaging of Biphoton States: Fundamentals and Applications
Quantum states of two photons exhibit a rich polarization and spatial structure, which provides a fundamental resource of strongly correlated and entangled states. This review analyzes the physics of these intriguing properties and explores the various techniques and technologies available to measure them, including the state of the art of their ...
Alessio D'Errico, Ebrahim Karimi
wiley +1 more source
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa +19 more
wiley +1 more source

