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Germanium-Mediated Catalysis via Ge(II)/Ge(III)/Ge(IV) or Ge(II)/Ge(IV) Redox Cycling

Journal of the American Chemical Society
Main group elements have recently emerged as promising candidates for redox catalysis, challenging the traditional reliance on transition metals. Despite heavy group 14 elements, such as germanium, possessing variable oxidation states that suggest their redox catalytic potential, their practical applications have been limited. In this study, we present
Yihan Zhou   +8 more
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Interfacial properties of all-epitaxial Fe–Ge/Ge heterostructures on Ge(111)

Thin Solid Films, 2013
The molecular-beam-epitaxy growth of Fe-Ge/Ge/Fe-Ge trilayers on Ge(111) wafers has been investigated as a function of three parameters: the Ge spacer coverage, the substrate temperature (T-D) and the dynamic atomic hydrogen (H) exposure during the Ge spacer deposition.
Maafa, I   +9 more
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Reactivity Studies of a GeI−GeI Compound with and without Cleavage of the Ge−Ge Bond

Inorganic Chemistry, 2010
This Communication describes two strikingly different reactivities of a digermylene [{PhC(NtBu)(2)}(2)Ge(2)] (1) featuring a Ge(I)-Ge(I) single bond. In the reaction with azobenzene, 1 affords the oxidative addition product LGeN(Ph)N(Ph)GeL [2; L = PhC(NtBu)(2)], with simultaneous cleavage of the Ge-Ge bond, whereas treatment of 1 with Fe(2)(CO)(9 ...
Sakya S, Sen   +4 more
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The Knight shift of Ge and As in liquid Ge, and in liquid Ge and Ga alloys

Journal of Physics: Condensed Matter, 1990
The Knight shifts of As and Ge in liquid Ge have been determined by TDPAD (time-differential perturbed angular distribution) measurements over a temperature range of 1210-1370 K, using the isomeric nuclei 73mAs and 69mGe as probe atoms. The Knight shifts have also been measured in liquid Ga (295-1175 K), Ga0.33Ge0.66 (1010-1210 K), Ge0.66Pb0.33 (1170 ...
M Durrwachter   +5 more
openaire   +1 more source

Luminescence properties of Ge implanted SiO2:Ge and GeO2:Ge films

Applied Surface Science, 2009
Abstract We have investigated cathodeluminescence (CL) of Ge implanted SiO2:Ge and GeO2:Ge films. The GeO2 films were grown by oxidation of Ge substrate at 550 °C for 3 h in O2 gas flow. The GeO2 films on Ge substrate and SiO2 films on Si substrate were implanted with Ge-negative ions.
Nobutoshi Arai   +7 more
openaire   +1 more source

Ge diffusion at Ge/GaAs heterojunctions

Journal of Applied Physics, 1984
Interdiffusions at Ge/GaAs heterojunctions formed by the epitaxial deposition of Ge films on GaAs have been studied for temperatures ranging from 650–800 °C. The diffusion coefficients of Ge in GaAs have been found to be 1.6×10−5 exp(−2.06/kT) for Cr: and Si:doped GaAs. After the diffusion heat treatment, Ge was found to be p type and ohmic.
K. Sarma   +5 more
openaire   +1 more source

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2017
????????????????, ?????? ?? ?????????????????????????? ?????????????? ?????????????????? ???? Ge??????xSix/Ge/Ge??????xSix p-???????? ?????? ???????????? ?????????? Ge ?????????? ~30 ???? ???????????????? ?????? ?? ???????????? ???????? Ge ?????????????????????? ???? ?????? ?????????????????? ??????????????, ?????????????????????????????? ?? ???????????
openaire   +1 more source

???????????????????????? ?????????????????????????? ?????????????????????? ?????????????????????????? ???????????????????????????? p-Ge/Ge??????xSix ?? ?????????????? ???????????????? ???????????????????????????????????

2017
?? ?????????????????????? (2D) ???????????????? ?????????????? (???????????????????????? ?????????????????????????????? p-Ge/Ge??????xSix) ???? ?????????????????????? ?? ??? e??/h ?????? ?????????????? ???????????????????????? (T ???1,5 ??) ?????? ???????????????? ?????????????????????? ?????????????? ???????????????? ?????????????? ?????? ?????????????
openaire   +3 more sources

Fuzzy GE-filters of GE-algebras

Summary: In this paper, notions of \(\in_t\)-set and \(Q_t\)-set of a fuzzy set \(f\) in a GE-algebra \(X\) are introduced and defined fuzzy GE-algebra in terms of \(\in_t\)-set. We provided conditions for the \(\in_t\)-set and \(Q_t\)-set of a fuzzy set \(f\) to be GE-subalgebras of \(X\). We provided conditions for a fuzzy set in a GE-algebra to be a
Bandaru, R.   +2 more
openaire   +1 more source

?????????????????????????? ?????????????????? ?? ???????????????????????????????????????????????? ??????????????????: ???????????????? ?? ?????????????????? ge-

2014
???????????? ???????????????????? ???????? ???????????????????? ????????????, ?????????????????????? ???????????????? ???????????????????????????????? ?????????????????????????????????????????? ??????????. ?? ?????? ?????????????? ???????????????????????? ???????????????? ?????????? ???????????????????????? ???????? ?????????????????????????????? ?? ???
openaire   +3 more sources

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