Results 201 to 210 of about 10,390,924 (281)

Extreme Bond Ionicity in Mg─Te Chalcogenides for Ultrathin Low Voltage Selector‐Only Memory beyond the Leakage Scaling Limit

open access: yesAdvanced Materials, EarlyView.
Mg─Te chalcogenides address the leakage scaling trade‐off in ultrathin selector‐only memory. Structural partitioning in multiphase Mg─Te, combined with highly ionic Mg─Te bonding and Hf interfacial engineering, supports reliable 5 nm thickness operation at low write voltage with suppressed leakage current, narrow threshold voltage distributions, 10 ns ...
Yoori Seo   +5 more
wiley   +1 more source

Side‐Chain‐Induced Interlayer Slipping in Metalloporphyrin COFs Enables Microenvironment and Spin‐State Regulation for Photocatalytic CO2 Reduction

open access: yesAdvanced Materials, EarlyView.
Alkoxy chain length drives a continuous transition from eclipsed AA to a serrated, slipped AA* configuration over Co‐porphyrin COFs. A moderate slip both contracts the pore channel to enrich CO2 and suppress hydrogen evolution, and enhances collective high‐spin of Co sites, which delivers a record CO production rate with high selectivity.
Jie He   +8 more
wiley   +1 more source

Polar Wurtzite NbAlN: A Transition‐Metal Nitride Alloy for Polarization‐Engineered GaN Heterostructures

open access: yesAdvanced Materials, EarlyView.
A novel polar wurtzite alloy, NbAlN, is demonstrated as a transition‐metal‐containing polar barrier for GaN heterostructures. Nb atoms form coherent nanoscale enrichment within the wurtzite lattice without disrupting metal polarity. This study demonstrates that transition metals can be integrated into polar nitrides to enable polarization‐related ...
Atsushi Kobayashi   +12 more
wiley   +1 more source

Atomically Precise Ag11 and Ag12 Nanocluster‐Assembled 2D Materials for Memristive and Neuromorphic Functionality

open access: yesAdvanced Materials, EarlyView.
Two‐dimensional Ag11 and Ag12 cluster‐assembled materials (CAMs) are synthesized, offering atomically precise platforms with tunable electronic properties. The resulting materials exhibit robust memristive switching and neuromorphic response, demonstrating their promise for advanced nanoelectronic and memory applications.
Noohul Alam   +7 more
wiley   +1 more source

Memristive Motion‐Streak Neuron for Spatiotemporal Multiple Object Detection

open access: yesAdvanced Materials, EarlyView.
This work proposes motion‐streak neuron hardware using amorphous In–Ga–Zn–O optoelectronic memristors and dynamic memristors for spatiotemporal multiple‐object detection. The motion streak neuron array processes optical and electrical stimuli, allowing speed‐dependent filament relaxation to encode motion trajectories.
Hyungjun Park   +9 more
wiley   +1 more source

A marginal structural model for normal tissue complication probability. [PDF]

open access: yesBiostatistics
Tang TS   +4 more
europepmc   +1 more source

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