Results 181 to 190 of about 263,270 (261)

Inverse Design of Metal-Organic Frameworks for CH₄/N₂ Separation Enabled by Coupled Machine Learning and Genetic Algorithms. [PDF]

Adv Sci (Weinh)
Li W, Zhang X, Guo H, Li L, Ding L, Yang Q.   +5 more
europepmc   +1 more source

DigiChrom: A Domain Ontology for Semantic Representation of Trivalent Chromium Platings and Its Large Language Model‐Based Alignment With Multiple Mid‐Level Ontologies

Advanced Engineering Materials, EarlyView.
Digitalizing electroplating requires both domain knowledge and interoperability. This work introduces PlatOn, a domain ontology for trivalent chromium plating and coating characterization, and a hybrid pipeline that aligns it to a mid‐level reference ontology by combining eight similarity metrics with language model reasoning. Expert‐validated mappings
Janik Harter, Elena Garcia Trelles, Christoph Schweizer, Thomas Seifert, Christoph Baumer, Mahmoud Elkady, Katja Feige, Daniel Grimme, Edgar Hoffmann, Andreas Waibel, Anke Walter   +10 more
wiley   +1 more source

Model Parametrization-Based Genetic Algorithms Using Velocity Signal and Steady State of the Dynamic Response of a Motor. [PDF]

Biomimetics (Basel)
Cruz-Fernández M, López-Maldonado JT, Rodriguez-Abreo O, Ortiz Verdín AA, Amezcua Tinajero JI, Macías-Socarrás I, Rodríguez-Reséndiz J.   +6 more
europepmc   +1 more source

Extrusion‐Based Additive Manufacturing of Advanced Ceramics: Strengthening Mechanisms and Process Optimization Review

Advanced Engineering Materials, EarlyView.
This review comprehensively evaluates extrusion‐based additive manufacturing for advanced ceramics, detailing feedstock options and key process parameters. By critically addressing defect mechanisms like porosity and cracking, the work highlights optimization strategies through machine learning and advanced postprocessing.
Meisam Bakhtiari, Mohammad Hadi Sheikh‐Ansari, Avinash Borgaonkar, Mehran Dadkhah, Abdollah Saboori   +4 more
wiley   +1 more source

Augmenting genetic algorithms with machine learning for inverse molecular design. [PDF]

Chem Sci
Kneiding H, Balcells D.
europepmc   +1 more source

Integration of OpenCV‐Based Microscopic Adhesive Volume Measurement Into a Pyiron Workflow for Automated Data Analysis

Advanced Engineering Materials, EarlyView.
Residual adhesive after electrode loading in adhesive‐assisted resistance spot welding is quantified through a traceable experimental‐to‐digital workflow. Chromatic confocal topography provides calibrated surface‐height data, while OpenCV detects the electrode imprint and integrates adhesive height into comparable volume metrics.
Sung‐Min Wi, Jiangdong Zhao
wiley   +1 more source

Generating New Coordination Compounds via Multireference Simulations, Genetic Algorithms, and Machine Learning: The Case of Co(II) and Dy(III) Molecular Magnets. [PDF]

JACS Au
Frangoulis L, Khatibi Z, Mariano LA, Lunghi A.   +3 more
europepmc   +1 more source

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

Advanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone, Victoria Clerico, Wooseok Choi, Tommaso Stecconi, Folkert Horst, Laura Bégon‐Lours, Matteo Galetta, Antonio La Porta, Nikhil Garg, Fabien Alibart, Bert Jan Offrein, Valeria Bragaglia   +11 more
wiley   +1 more source

Synergizing GIS and genetic algorithms to enhance road management and fund allocation with a comprehensive case study approach. [PDF]

Sci Rep
Mohamed AG, Alqahtani FK, Ismail ER, Nabawy M.   +3 more
europepmc   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source