Results 161 to 170 of about 1,616 (267)

Robust NbN‐on‐Si/SiGe Hybrid Microwave Quantum Circuits With Long‐Term Stability

open access: yesAdvanced Electronic Materials, EarlyView.
Superconducting NbN resonators integrated with Si/SiGe quantum wells based semiconducting chip are investigated as a CMOS–compatible platform for scalable quantum hardware. Temperature–dependent microwave spectroscopy reveals loss mechanisms from TLS, quasiparticles, and scattering.
Paniz Foshat   +5 more
wiley   +1 more source

Efficient In‐Hardware Matrix–Vector Multiplication and Addition Exploiting Bilinearity of Schottky Barrier Transistors Processed on Industrial FDSOI

open access: yesAdvanced Electronic Materials, EarlyView.
ABSTRACT Machine learning and Artificial Intelligence (AI) tasks have stretched traditional hardware to its limits. In‐hardware computation is a novel approach that aims to run complex operations, such as matrix–vector multiplication, directly at the device level for increased efficiency.
Juan P. Martinez   +10 more
wiley   +1 more source

Magnetic coupling transforms random snapping into ordered sequences in soft metamaterials. [PDF]

open access: yesSci Adv
Sun H   +7 more
europepmc   +1 more source

Physics Informed Generative Surrogate Learning for Full Wave Validated Real Time Beamforming in Programmable Metasurfaces

open access: yesAdvanced Electronic Materials, EarlyView.
A physics‐guided generative surrogate framework is developed for programmable metasurface beamforming. Mode‐conditioned binary state generation, aperture‐physics prediction, routed residual correction, NSGA‐II optimization, and CST validation are combined to support fast candidate screening and full‐wave beam refinement across single‐beam, dual‐beam ...
Wenqian Liu   +4 more
wiley   +1 more source

Balancing Injection and Short‐Channel Effects in Organic Permeable Base Transistors via Thickness Scaling

open access: yesAdvanced Electronic Materials, EarlyView.
Organic permeable base transistors are shown to benefit from balanced control of the semiconductor layers above and below the permeable base. Simulations and experiments indicate that the top semiconductor layer affects charge injection and lateral transfer length, while the bottom layer modulates the collector‐induced short‐channel effects.
Sun‐Woo Jo   +4 more
wiley   +1 more source

Predictable and Scalable Analog Matrix–Vector Multiplication in Memristor Crossbars via Closed‐Form Wire‐Resistance Compensation

open access: yesAdvanced Electronic Materials, EarlyView.
Wire resistance and sneak paths severely compromise the performance of large memristor crossbars. A predictive closed‐form distributed line‐resistance model, combined with a fourmatrix geometry‐averaging algorithm, eliminates these parasitic limitations.
Davide Rossetti   +5 more
wiley   +1 more source

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