Results 181 to 190 of about 377 (207)

Crystal plasticity model with enhanced hardening by geometrically necessary dislocation accumulation

Journal of the Mechanics and Physics of Solids, 2002
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Evers, L.P., Parks, D.M., Brekelmans, W.A.M., Geers, M.G.D.   +3 more
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Experimentally determined content of a geometrically necessary dislocation boundary in copper

Acta Materialia, 2004
Abstract Weak beam and stereo transmission electron microscopy (TEM) were used to analyze the dislocation content of a crystallographic geometrically necessary dislocation boundary (GNB) in rolled copper. The GNB is oriented close to the ( 1 1 1) slip plane and is composed primarily of dislocations from the three highest stressed slip ...
Rodney J McCabe, Amit Misra, Terence E Mitchell   +2 more
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Finite element analysis of geometrically necessary dislocations in crystal plasticity

International Journal for Numerical Methods in Engineering, 2012
SUMMARYWe present a finite element method for the analysis of ductile crystals whose energy depends on the density of geometrically necessary dislocations (GNDs). We specifically focus on models in which the energy of the GNDs is assumed to be proportional to the total variation of the slip strains.
Hurtado, Daniel E., Ortiz, Michael
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Characterizing geometrically necessary dislocations using an elastic–plastic decomposition of Laplace stretch

Zeitschrift für angewandte Mathematik und Physik, 2020
The paper studies the geometric dislocation density tensor and Burgers vector using an elastic-plastic decomposition of Laplace stretch which arises from a QR decomposition of the deformation gradient and allows for direct experimental measurement. The geometric dislocation density tensor is obtained using the classical argument of failure of a Burgers
Sandipan Paul, Alan D. Freed
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Gradients of geometrically necessary dislocations from white beam microdiffraction

Materials Science and Engineering: A, 2005
Abstract Variations in the local crystallographic orientation due to the presence of geometrically necessary dislocations and dislocation boundaries smear the distribution of intensity near Laue reflections. Here, some simple model distributions of geometrically necessary dislocations, GNDs, are used to estimate the dislocation tensor field from the ...
R.I. Barabash, G.E. Ice, J.W.L. Pang
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Crystallographic aspects of geometrically-necessary and statistically-stored dislocation density

Acta Materialia, 1999
Abstract Classical plasticity has reached its limit in describing crystalline material behavior at the micron level and below. Its inability to predict size-dependent effects at this length scale has motivated the use of higher-order gradients to model material behavior at the micron level.
A Arsenlis, D.M Parks
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Geometrically necessary dislocations in FCC polycrystalline metallic materials on the mesoscale

Bulletin of the Russian Academy of Sciences: Physics, 2011
The dislocation structure of deformed copper alloys doped with Mn and Al was determined by selected area diffraction (SAD), performed using a transmission electron microscope. The scalar dislocation density, the density of geometrically necessary dislocations, and the density of statistically stored dislocations were measured.
E. V. Kozlov, L. I. Trishkina, T. V. Cherkasova, N. A. Koneva   +3 more
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Resolving the geometrically necessary dislocation content by conventional electron backscattering diffraction

Scripta Materialia, 2008
From local orientation measurements on planar surfaces by means of electron backscattering diffraction, six components of the lattice curvature tensor can be identified. They allow determination of five components of the dislocation density tensor (thus two more than hitherto reported) and, additionally, one difference between two other components ...
Wolfgang Pantleon
exaly   +2 more sources

Estimations of bulk geometrically necessary dislocation density using high resolution EBSD

Ultramicroscopy, 2013
Characterizing the content of geometrically necessary dislocations (GNDs) in crystalline materials is crucial to understanding plasticity. Electron backscatter diffraction (EBSD) effectively recovers local crystal orientation, which is used to estimate the lattice distortion, components of the Nye dislocation density tensor (α), and subsequently the ...
T J, Ruggles, D T, Fullwood
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Identification of geometrically necessary dislocations in solid phase crystallized poly-Si

Journal of Applied Physics, 2013
In this work, the presence of geometrically necessary dislocations (GNDs) in polycrystalline silicon (poly-Si) thin films was detected, suggesting that plastic deformation occurs during the solid phase crystallization (SPC) process of amorphous silicon (a-Si:H).
Law, F., Yi, Y., Hidayat, Widenborg, P.I., Luther, J., Hoex, B.   +5 more
openaire   +1 more source