Results 271 to 280 of about 2,346 (291)

Crystallographic aspects of geometrically-necessary and statistically-stored dislocation density

Acta Materialia, 1999
Abstract Classical plasticity has reached its limit in describing crystalline material behavior at the micron level and below. Its inability to predict size-dependent effects at this length scale has motivated the use of higher-order gradients to model material behavior at the micron level.
A Arsenlis, D.M Parks
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Geometrically necessary dislocations in FCC polycrystalline metallic materials on the mesoscale

Bulletin of the Russian Academy of Sciences: Physics, 2011
The dislocation structure of deformed copper alloys doped with Mn and Al was determined by selected area diffraction (SAD), performed using a transmission electron microscope. The scalar dislocation density, the density of geometrically necessary dislocations, and the density of statistically stored dislocations were measured.
E. V. Kozlov, L. I. Trishkina, T. V. Cherkasova, N. A. Koneva   +3 more
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Assessment of geometrically necessary dislocation levels derived by 3D EBSD

Acta Materialia, 2015
Abstract Existing alternatives for the calculation of geometrically necessary dislocation (GND) densities from orientation fields are discussed. Importantly, we highlight the role of reference frames and consider different sources of error. A well-controlled micro cantilever bending experiment on a copper bicrystal has been analyzed by 3-dimensional ...
P.J. Konijnenberg, S. Zaefferer, D. Raabe   +2 more
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Estimations of bulk geometrically necessary dislocation density using high resolution EBSD

Ultramicroscopy, 2013
Characterizing the content of geometrically necessary dislocations (GNDs) in crystalline materials is crucial to understanding plasticity. Electron backscatter diffraction (EBSD) effectively recovers local crystal orientation, which is used to estimate the lattice distortion, components of the Nye dislocation density tensor (α), and subsequently the ...
T J, Ruggles, D T, Fullwood
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Identification of geometrically necessary dislocations in solid phase crystallized poly-Si

Journal of Applied Physics, 2013
In this work, the presence of geometrically necessary dislocations (GNDs) in polycrystalline silicon (poly-Si) thin films was detected, suggesting that plastic deformation occurs during the solid phase crystallization (SPC) process of amorphous silicon (a-Si:H).
Law, F., Yi, Y., Hidayat, Widenborg, P.I., Luther, J., Hoex, B.   +5 more
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Geometrically necessary dislocation fingerprints of dislocation loop absorption at grain boundaries

Physical Review Materials, 2022
Larissa M. Woryk, Sicong He, Emily M. Hopkins, Chang-Yu Hung, Jian Han, David J. Srolovitz, Jaime Marian, Mitra L. Taheri   +7 more
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The effect of geometrically necessary dislocations on the flow stress of deformed crystals containing a heterogeneous dislocation distribution

Materials Science and Engineering: A, 2001
Abstract In deformed crystals, long-range internal stresses develop during deformation as a consequence of the heterogeneity of the distribution of the dislocations which frequently form a cell structure. The composite model describes these internal stresses in a natural manner in terms of the elastic/plastic strain mismatch between the hard cell ...
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Resolving the geometrically necessary dislocation content by conventional electron backscattering diffraction

Scripta Materialia, 2008
From local orientation measurements on planar surfaces by means of electron backscattering diffraction, six components of the lattice curvature tensor can be identified. They allow determination of five components of the dislocation density tensor (thus two more than hitherto reported) and, additionally, one difference between two other components ...
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A gradient theory of single-crystal viscoplasticity that accounts for geometrically necessary dislocations

Journal of the Mechanics and Physics of Solids, 2002
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Non-equivalence contribution of geometrically necessary dislocation and statistically stored dislocation in work-hardened metals

Materials Science and Engineering: A, 2022
Nan Wang, Yongnan Chen, Gang Wu, Qinyang Zhao, Zhen Zhang, Lixia Zhu, Jinheng Luo   +6 more
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