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Germanium and Germanium Compounds
1990Abstract Germanium is a semiconducting metalloid element found in Group IV A. Germanium is used in the field of electronics, infrared optics, and in the fields of gamma ray spectroscopy, catalysis, and fiber optics. This article discusses the sources, manufacturing, and processing of germanium, and focuses on the chemical properties of ...
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The Journal of Physical Chemistry, 1992
New germanium sulfides, oxides, and mixed sulfide-oxides were prepared from the reaction of elemental sulfur with elemental germanium and oxygen and characterized by infrared absorption spectroscopy. The GeS diatomic product showed absorptions at 564.6, 566.8, 568. 1, 569.2, and 571.7 cm -1 for natural isotopic germanium.
Parviz Hassanzadeh, Lester Andrews
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New germanium sulfides, oxides, and mixed sulfide-oxides were prepared from the reaction of elemental sulfur with elemental germanium and oxygen and characterized by infrared absorption spectroscopy. The GeS diatomic product showed absorptions at 564.6, 566.8, 568. 1, 569.2, and 571.7 cm -1 for natural isotopic germanium.
Parviz Hassanzadeh, Lester Andrews
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Luminescence from Germanium and Germanium on Silicon
Solid State Phenomena, 2013We present an overview on generation of direct gap photo- and electroluminescence in Ge bulk wafers, Ge thin films deposited on Si, and Ge p-i-n diodes prepared on Si substrates. We analyzed the emission in a spectral range from 0.45 eV to 0.95 eV, covering the radiation caused by direct gap transitions, the indirect one, and also the luminescence ...
Tzanimir Arguirov +6 more
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Synthesis of Antimonene on Germanium
Nano Letters, 2017The lack of large-area synthesis processes on substrates compatible with industry requirements has been one of the major hurdles facing the integration of 2D materials in mainstream technologies. This is particularly the case for the recently discovered monoelemental group V 2D materials which can only be produced by exfoliation or growth on exotic ...
M. Fortin-Deschênes +9 more
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Amorphous germanium contacts on germanium detectors
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2005Abstract The rectification properties of sputtered amorphous germanium contacts made under a variety of conditions on germanium detectors have been measured as a function of temperature and electric field. The leakage current increased as a function of voltage above depletion voltage. The rectifying amorphous–crystalline heterojunction theory derived
Ethan L. Hull, Richard H. Pehl
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Stable germanium dioxide films on germanium
Solid-State Electronics, 1972Abstract When SiO 2 is deposited on a germanium wafer as a protective film, the oxidation of germanium is not prevented when the wafer is annealed in oxygen at temperatures of 600 to 800°C. However, the conversion of germanium into GeO is prevented.
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Germanium. XXXI. Alloys of Germanium: Silver-Germanium
The Journal of Physical Chemistry, 1929T. R. Briggs +2 more
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Germanium. XXIII. Germanium Monosulphide
The Journal of Physical Chemistry, 1927L. M. Dennis, S. M. Joseph
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The Germanium-Germanium Dioxide Electrode
Industrial & Engineering Chemistry Analytical Edition, 1935M. L. Nichols, S. R. Cooper
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GERMANIUM. X. THE DETERMINATION OF GERMANIUM
Journal of the American Chemical Society, 1925E. B. Johnson, L. M. Dennis
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