Results 141 to 150 of about 149,711 (266)

Historical Foundation and Practical Guideline for Ferroelectric Switching Kinetic Studies

open access: yesAdvanced Functional Materials, EarlyView.
The P and U pulses in the conventional PUND measurements are not identical because of the interplay between switching current and the measurement circuit components. This circuit effect can lead to a shift in polarization transients and misinterpreted physics in the switching kinetics.
Yi Liang, Pat Kezer, John T. Heron
wiley   +1 more source

Correlated Metal LaNiO3 as a p‐Type Transparent Conductor

open access: yesAdvanced Functional Materials, EarlyView.
p‐type transparent conducting oxides are needed to enable superstrate solar cell geometries with n‐type absorbers. The p‐type correlated metal LaNiO3 combines high optical transmission with low electrical resistivity and is compatible with a range of scalable deposition processes.
Shivang Beniwal   +8 more
wiley   +1 more source

Al-Induced Unusual Grain Growth in Ni-Co-Cr Multi-Principal Element Alloys. [PDF]

open access: yesMaterials (Basel)
Zhou K   +9 more
europepmc   +1 more source

Ionic Precursors Transformed Into Vinyl Acetate Synthesis Catalyst via Reaction‐Driven Restructuring

open access: yesAdvanced Functional Materials, EarlyView.
This work demonstrates that a simple physical mixture of Pd and Au ionic precursors, KOAc promoter, and SiO2 support can transform into a highly active vinyl acetate synthesis catalyst through reaction‐driven restructuring. The results highlight reaction‐induced restructuring as an innovative and sustainable catalyst design strategy.
Byeong Jun Cha   +11 more
wiley   +1 more source

A Novel Ge-Doping Approach for Grain Growth and Recombination Suppression in Buffer-Free CIGSe Solar Cells. [PDF]

open access: yesMaterials (Basel)
Jia M   +9 more
europepmc   +1 more source

Unconventional grain growth suppression in oxygen-rich metal oxide nanoribbons. [PDF]

open access: yesSci Adv, 2021
Han HJ   +8 more
europepmc   +1 more source

Ambient‐Stable Transparent P‐Type CuI Transistors Via Room‐Temperature Pulsed Laser Deposition

open access: yesAdvanced Functional Materials, EarlyView.
An in situ PLD fabricated AlOx${\rm AlO}_x$/CuI/AlOx${\rm AlO}_x$ sandwich structure enables stable CuI TFTs with a field‐effect mobility of 2.3 ±$\pm$ 0.7 cm2${\rm cm}^{2}$ V−1${\rm V}^{-1}$ s−1${\rm s}^{-1}$ and excellent ambient stability. Complementary inverters based on CuI:Rb and ZnO:Al exhibit rail‐to‐rail voltage transfer characteristics and an
Yang Chen   +5 more
wiley   +1 more source

Home - About - Disclaimer - Privacy