Results 321 to 330 of about 942,168 (389)

A Charge‐Coupled Phototransistor Enabling Synchronous Dynamic and Static Image Detection

open access: yesAdvanced Materials, EarlyView.
A charge‐coupled phototransistor is presented that uses dual photosensitive capacitors to provide gate voltage to a single transistor channel, enabling simultaneous capture of dynamic and static information, surpassing existing DAVIS technology. This charge‐coupled phototransistor paves the way for the development of high‐performance, low‐power, and ...
Shun Feng   +13 more
wiley   +1 more source

Graphene-based FETs for advanced biocatalytic profiling: investigating heme peroxidase activity with machine learning insights. [PDF]

open access: yesMikrochim Acta
Mirsian S   +7 more
europepmc   +1 more source

Quantum Geometric Moment Encodes Stacking Order of Moiré Matter

open access: yesAdvanced Materials, EarlyView.
The Berry curvature dipole (BCD) changes across valley Chern transitions. A new electrical technique is developed to use such BCD sign flips for distinguishing the stacking order of a moiré material, namely twisted double bilayer graphene. Such a method, analogous to spectroscopic techniques, establishes a link between quantum geometry and stacking ...
Surat Layek   +8 more
wiley   +1 more source

Challenges and Opportunities for Rechargeable Aqueous Sn Metal Batteries

open access: yesAdvanced Materials, EarlyView.
Rechargeable aqueous batteries with metal anodes promise enhanced energy density, combining higher output voltage and capacity with high safety. This perspective highlights the emerging potential of the Sn metal anode, emphasizing its resistance to hydrogen evolution, high reversibility, and sustainability.
Haozhe Zhang   +3 more
wiley   +1 more source

Synthetic Band Structure Engineering of Graphene Using Block Copolymer-Templated Dielectric Superlattices. [PDF]

open access: yesACS Nano
Jamalzadeh M   +9 more
europepmc   +1 more source

Ultralow Voltage Operation of p‐ and n‐FETs Enabled by Self‐Formed Gate Dielectric and Metal Contacts on 2D Tellurium

open access: yesAdvanced Materials, EarlyView.
This work presents atomically controlled material transformations in 2D Te for near‐ideal FETs, featuring low‐resistance NiTex‐Te contacts and ultraclean TiOx‐Te gate dielectrics (0.88 nm EOT). A record‐low SS of 3.5 mV dec−1 is achieved at 10 K, and 2D Te‐based CMOS inverters operate at 0.08 V, enabling energy‐efficient IC technologies.
Chang Niu   +8 more
wiley   +1 more source

Heterostructured Electrocatalysts: from Fundamental Microkinetic Model to Electron Configuration and Interfacial Reactive Microenvironment

open access: yesAdvanced Materials, EarlyView.
Heterostructures have emerged as advanced electrocatalysts to convert earth‐abundant simple molecules into high‐value‐added products. On the basis of atomistic understanding to accelerate the electrochemical processes, the architecture of heterostructured electrocatalysts is comprehensively discussed from the point of view of modulating electronic ...
Yun Li   +3 more
wiley   +1 more source

Graphene Nanopore Fabrication and Applications. [PDF]

open access: yesInt J Mol Sci
Sun Q   +5 more
europepmc   +1 more source

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