Results 191 to 200 of about 92,201 (315)

Effect of graphene oxide nanoparticle coatings on the strength of packaging paper and its barrier and antibacterial properties [PDF]

open access: diamond, 2019
Maliheh Akhtari   +3 more
openalex   +1 more source

High‐Yield Fabrication of Electrolyte‐Gated Transistors Based on Graphene Acetic Acid

open access: yesAdvanced Electronic Materials, EarlyView.
We fabricated a liquid‐gated transistor based on graphene acetic acid, which is dielectrophoretically deposited, featuring a spatial resolution down to 10 microns. Our method enables a versatile and reproducible fabrication featuring state‐of‐the‐art performance.
Georgian Giani Ilie   +13 more
wiley   +1 more source

An Electrically Conducting Water‐based Reversible Adhesive

open access: yesAdvanced Electronic Materials, EarlyView.
A water‐based reversible glue is demonstrated. The glue has electrical properties similar to other conducting adhesives but can detach after an alkaline wash. Metal fillers are added to an aqueous mixture of polymer nanoparticles synthesized by emulsion polymerization. The nanoparticles are stabilized by poly(acrylic acid) chains bonded to them. The pH‐
Bassam A. Aljohani   +5 more
wiley   +1 more source

Exfoliated‐MoS2 Gradual Resistive Switching Devices as Artificial Synapses

open access: yesAdvanced Electronic Materials, EarlyView.
A vertical memristor based on untreated, exfoliated MoS2 is presented, revealing gradual resistive switching governed by Schottky barrier modulation at the MoS2/metal interface from the trapping/detrapping of charges. Furthermore, the device emulates synaptic‐like plasticity functions, including: potentiation, depression, and spike‐amplitude‐dependent ...
Deianira Fejzaj   +3 more
wiley   +1 more source

Monolithic Co‐Integration of Vertical FET and Memristor for 1T1R Cell

open access: yesAdvanced Electronic Materials, EarlyView.
This work demonstrates a vertically integrated one‐transistor–one‐memristor (1T1R) cell by stacking a MoS2 vertical field‐effect transistor (VFET) with a mortise–tenon‐shaped (MTS) memristor. This compact architecture not only exhibits highly uniform resistive switching characteristics but also provides a strategy for constructing densely packed ...
Fubo Jiao   +15 more
wiley   +1 more source

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