Results 191 to 200 of about 99,192 (223)

Wafer‐Scale Synthesis of Topological Insulator Sb2Te3 Thin Films

open access: yesAdvanced Materials Interfaces, EarlyView.
This work demonstrates how the topologically protected conduction in Sb2Te3 thin films can be extended from few‐mm2 samples’ area up to larger areas of several cm2 Si(111) wafers. The reported findings represent a breakthrough for the future technology scale‐up of topological insulators for applications such as spintronics, thermoelectrics, and quantum
Ali Shafiei   +12 more
wiley   +1 more source

Nano‐Octahedron Cobalt Oxide Decorated Graphene Nanocomposites for the Selective/Simultaneous Detection of Dopamine

open access: yesAdvanced Materials Interfaces, EarlyView.
Nano‐octahedron Co3O4 decorated graphene composite electrode for selective and simultaneous detection of dopamine. The detection limit of 0.09 µM, and linear range from 1 to 500 µM are reported. The synergistic effect of nano octahedron Co3O4 and graphene results in excellent performance of the sensor in terms of selectivity and sensitivity.
Swathi Tharani Dharmalingam   +5 more
wiley   +1 more source

Electrostatic in-plane structural superlubric actuator. [PDF]

open access: yesNat Commun
Huang X   +6 more
europepmc   +1 more source

Scaled‐Up Graphene Growth Through Chemical Vapor Deposition Over Large‐Area Liquid Cu Catalysts

open access: yesAdvanced Materials Interfaces, EarlyView.
Scaling up the catalyst area fivefold and improving molten catalyst cleaning minimize reactor kinetic effects, enabling reaction kinetics to dominate graphene growth. This results in high‐quality graphene with controlled layering and measurable nucleation rates.
Mahesh K. Prabhu   +9 more
wiley   +1 more source

p‐Graphene/Quantum Dot/n‐GaAs Mixed‐Dimensional Heterostructure Junction for Ultrathin Light‐Emitting‐Diodes

open access: yesAdvanced Materials Interfaces, EarlyView.
Novel p‐type graphene/InAs quantum dot (QD)/n‐type GaAs mixed‐dimensional heterojunction structures are demonstrated for 1.3 µm light‐emitting diodes The p‐graphene serves as an ultrathin hole injection layer and the hybrid device shows 800 × stronger electroluminescence output powers than the reference LEDs without p‐graphene.
Quang Nhat Dang Lung   +6 more
wiley   +1 more source

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