Results 81 to 90 of about 55,557 (267)
Laser Interferometry for Broad Area SPR-Grating Couplers in Chemical Applications
Proceedings, 2017 In this work, the fabrication of a SPR (Surface Plasmon Resonance)-grating coupler using Laser Interference Lithography (LIL) has been investigated, giving rise to large area diffraction gratings on a 100 nm-thick gold film. The period of the diffraction
Mauricio Moreno-Sereno +8 more
doaj +1 more source
Laser‐Assisted Phase Engineering of 2D MoS2 for Efficient Solution‐Processed Electronics
Advanced Materials, EarlyView.Here, local laser‐assisted phase transition from solution‐processed phase‐pure 1T′ to 2H MoS2 is shown to critically depend on the irradiation atmosphere. While processing in air leads to damaged insulating regions, inert conditions yield semiconducting 2H domains, enabling direct field‐effect transistor patterning with optimized lateral 1T′‐2H MoS2 ...
Anna Zhuravlova +10 more
wiley +1 more source
Field‐Programmable Mobile Magneto‐Photonic Metaparticles for Active Light Manipulation and Steering
Advanced Materials, EarlyView.We report magneto‐photonic metaparticles that integrate magnetic actuation with nanoimprinted metagratings, enabling mobile and programmable beam steering in aqueous environments. This platform achieves real time, directional light control beyond static or line‐of‐sight systems, while remaining compatible with scalable fabrication, providing a ...
Seung Yeol Lee, Yujie Luo, Ognjen Ilic
wiley +1 more source
Electrically Coded Retinomorphic Spectrophotodetector
Advanced Materials, EarlyView.Self‐powered retinomorphic pyro‐photodetector is demonstrated that avoids machine‐learning post‐processing and covers 365–940 nm. Electrostatic balancing of built‐in potential produces an electrical wavelength code, delivering <3 nm wavelength decoding accuracy with ∼46 µs response.
Mohit Kumar, Hyunmin Dang, Hyungtak Seo
wiley +1 more source
Advanced Materials, EarlyView.A scalable bottom‐up CVD methodology, based on liquid transition metal salt precursors, is presented for the controlled growth of two high‐quality MoSe2–WSe2 heterostructures (HSs): purely lateral (HS I) and hybrid lateral/vertical (HS II), by simply adjusting precursor concentration.
Md Tarik Hossain +16 more
wiley +1 more source
Advanced Materials, EarlyView.α‐MoO3 is established as a high‐index, low‐loss anisotropic platform bridging mid‐infrared polaritonics and ultraviolet‐visible nanophotonics. Spectroscopic ellipsometry and calculations reveal refractive indices exceeding 3.9, with the largest in‐plane birefringence among transparent layered crystals at 425–500 nm, enabling zero‐order UV waveplates ...
Adilet N. Toksumakov +14 more
wiley +1 more source
PhotonicsAugmented reality (AR) technology blends digital content with the real world to create immersive experiences. Diffractive waveguides, a key AR component, are popular because they balance weight, size, image quality, and ease of production.
Yong Li +5 more
doaj +1 more source
Advanced Materials, EarlyView.Mixed‐cation lead mixed‐halide perovskites suffer from structural instabilities linked to nanoscale heterogeneity. To probe this non‐destructively, a low‐dose, concurrent 4D‐STEM and EDX methodology has been developed. Examining a (FA0.83Cs0.17)Pb(I0.8Br0.2)3 film revealed a complex mosaic of coexisting crystal structures. Crucially, local deficiencies
Jinseok Ryu +6 more
wiley +1 more source
Radiation‐Matter Interaction in Chemical Vapor Deposition‐Grown Two‐Dimensional Tungsten Disulfide
Advanced Materials Interfaces, EarlyView.Gamma irradiation tunes the magnetic properties of CVD‐grown WS2 material. Moderate irradiation doses induce low‐temperature ferromagnetic‐like behavior, whereas higher doses suppress the magnetic response because of increased defect formation. These findings provide insight into defect‐mediated magnetism in 2D TMDs and could be relevant to future ...
Mongur Hossain +3 more
wiley +1 more source
Advanced Materials Interfaces, EarlyView.Large size (∼100 µm) monolayer MoS2 grown by LPI‐CVD on n‐GaN exhibit a high n‐type doping, very low strain, and a type‐I band alignment at MoS2/GaN interface. Photocurrent measurements under illumination with photon energies from ∼2 to ∼5 eV show superior electro‐optical performances of these MoS2/n‐GaN heterojunctions as compared to Ni/n‐GaN devices ...
Salvatore Ethan Panasci +12 more
wiley +1 more source