Results 71 to 80 of about 5,250 (287)

Biomass Native Structure Into Functional Carbon‐Based Catalysts for Fenton‐Like Reactions

open access: yesAdvanced Functional Materials, EarlyView.
This study indicates that eight biomasses with 2D flaky and 1D acicular structures influence surface O types, morphology, defects, N doping, sp2 C, and Co nanoparticles loading in three series of carbon, N‐doped carbon, and cobalt/graphitic carbon. This work identifies how these structural factors impact catalytic pathways, enhancing selective electron
Wenjie Tian   +7 more
wiley   +1 more source

Seasonal Influences on the Impulse Characteristics of Grounding Systems for Tropical Countries

open access: yesEnergies, 2019
One of the most important parameters of the performance of grounding systems is the soil resistivity. As generally known, the soil resistivity changes seasonally, hence the performance of grounding systems, at DC and under high impulse conditions.
Muhd Shahirad Reffin   +6 more
doaj   +1 more source

Environmental effects on the performance of electrical grounding systems [PDF]

open access: yes, 2013
Effects of surrounding environment of grounding electrode locations on the performance of overall grounding system has been studied. Copper rods were buried at 25 different locations with various environmental settings and their respective variations in ...
Lee, Weng Choun   +7 more
core   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

open access: yesAdvanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa   +19 more
wiley   +1 more source

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

open access: yesAdvanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee   +16 more
wiley   +1 more source

Contact impedance of grounded and capacitive electrodes [PDF]

open access: yesGeophysical Journal International, 2013
The contact impedance of electrodes determines how much current can be injected into the ground for a given voltage. If the ground is very resistive, capacitive coupling may be superior to galvanic coupling. The standard equations for the impedance of capacitive electrodes assume that the halfspace is an ideal conductor.
Andreas Hördt   +2 more
openaire   +1 more source

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

open access: yesAdvanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner   +14 more
wiley   +1 more source

Spatially Modulated Morphotropic Phase Boundaries in a Compressively Strained Multiferroic Thin Film

open access: yesAdvanced Functional Materials, EarlyView.
ABSTRACT The coexisting rhombohedral‐like (R′, MA) and tetragonal‐like (T′, MC) monoclinic phases in compressively strained bismuth ferrite thin films exhibit exceptional piezoelectric and magnetic properties. While previous studies have largely focused on probing the morphotropic phase boundaries (MPBs) comprising ordered R′/T′ twins, their self ...
Ting‐Ran Liu   +7 more
wiley   +1 more source

Topological study on electrode wells of vertical grounding electrodes of UHVDC

open access: yesThe Journal of Engineering, 2019
The main body of vertical grounding electrodes of an ultra‐high‐voltage direct current (UHVDC) converter station is dispersed electrode wells, due to the shielding effect between electrode wells, the arrangement of which is a problem that needs to consider the electrical performance, the area, and the economy.
Wei Chen   +5 more
openaire   +2 more sources

Achieving High ON State Current through Ferroelectric Polarization‐Dependent Interfacial Resistance Switching in Undoped Orthorhombic HfO2 Films

open access: yesAdvanced Functional Materials, EarlyView.
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand   +13 more
wiley   +1 more source

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