Results 261 to 270 of about 12,687,266 (297)

Formation of Cs–H surface compounds

Surface Science, 2002
Abstract The role of the Ru surface in the formation of Cs–H compounds has been investigated by using thermal desorption spectroscopy (TDS), ultraviolet photoelectron spectroscopy, UPS(21.2 eV) and metastable de-excitation spectroscopy (MDS). Cs atoms pre-adsorbed on Ru(0 0 0 1) surface considerably reduce the effective sticking probability for ...
Marco Rogozia, Horst Niehus, Artur Böttcher   +2 more
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Stable Minimal- and H-Surfaces

2010
The principal topic in this chapter is the study of stable minimal surfaces and of stable surfaces of prescribed mean curvature (H-surfaces). In this context it is important to investigate the Gauss map of such a map and its relation to stability. One is led to Bernstein-type results, to Nitsche’s uniqueness theorem, and to the finiteness of the number
Ulrich Dierkes, Stefan Hildebrandt, Friedrich Sauvigny   +2 more
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A remark on compact H -surfaces into ${\mathbb R}^3$

Mathematische Zeitschrift, 2002
The authors propose an existence theorem for a critical point of the energy functional, which enables one to characterize variationally the equation of surfaces of constant mean curvature \(H=\frac12\) in \(\mathbb{R}^3\) in conformal representation.
Ge, Yuxin, Hélein, Frédéric
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A height estimate for H -surfaces and existence of H -graphs

American Journal of Mathematics, 2001
Let Ω be a bounded planar domain which is convex (although not necessarily strictly convex) with area A . We prove that, for each real number H satisfying AH 2 < ρ 2 π, with ρ = (√5 - 1)/2, there exists a graph on Ω with constant mean curvature H and boundary ∂Ω.
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The structure of the Si(100)2 × 1: H surface

Surface Science, 1990
Abstract The SLAB-MINDO method has been employed to determine the structure of the Si(100)2 × 1: H surface. The positions of the adsorbed hydrogen atoms with respect to the nearest neighbour silicon atoms have been calculated, along with the displacements of all the silicon atoms within the first four silicon layers from their ideal bulk positions ...
B.I Craig, P.V Smith
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Oxidation of heated diamond C(100):H surfaces

Surface Science, 2000
Abstract This paper extends a previous study (Pehrsson and Mercer, submitted to Surf. Sci.) on unheated, hydrogenated, natural diamond (100) surfaces oxidized with thermally activated oxygen (O ∗ 2 ). In this paper, the oxidation is performed at substrate temperatures from Tsub=24 to 670°C.
Pehr E. Pehrsson, Thomas W. Mercer
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Continuous operated H−-surface plasma ion source

Review of Scientific Instruments, 1986
A H−-surface plasma source with a cesiated converter electrode has been operated continuously. Out of a single extraction aperture of a diameter of 13 mm, a H− current of 50 mA has been extracted with reasonable beam properties. The current was limited by the extraction voltage of 30 kV.
Piosczyk, B., Dammertz, G.
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Bubbling analysis at the free boundary for approximate $${\varvec{H}}$$-surfaces

Calculus of Variations and Partial Differential Equations
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Rui Gao, Zijun Wang, Miaomiao Zhu
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A new proof of regularity of weak solutions of the H -surface equation

Calculus of Variations and Partial Differential Equations, 2003
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On the regularity of H-surfaces with free boundaries on a smooth support manifold

Analysis, 2008
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