Results 191 to 200 of about 43,710 (347)
Evolution of Materials and Device Stacks for HfO2‐Based Ferroelectric Memories
This review summarizes engineering strategies for HfO2 based ferroelectric memories with focus on FeCAP and FeFET structures. It describes how dopant design, stress effects, and interface engineering improve the bulk ferroelectric response. It further discusses how channel engineering supports reliable memory characteristics and scalable integration ...
Eunjin Kim, Jiyong Woo
wiley +1 more source
Innovative hafnium composite: efficient fabrication and advanced biomedical potential in dentistry and oral health. [PDF]
Sead FF +9 more
europepmc +1 more source
Procalcitonin is a key biomarker for bacterial infections, but conventional detection methods are often time‐consuming. Here, we present an electrochemical sensor based on highly conductive Ti3C2Tx MXene combined with PEDOT:PSS, enabling direct antibody immobilization, while a bovine serum albumin coating provides antifouling protection.
Angelika Banaś +6 more
wiley +1 more source
Gram-Scale Synthesis of Hafnium-Rich Carbon Dots for Preclinical Computed Tomography Imaging Across Various Systems. [PDF]
Li S +11 more
europepmc +1 more source
This study examines how a PVDF‐like binder affects the argyrodite Li6PS5Cl electrolyte properties. Using an approach that combines bulk and surface characterization with electrochemistry, we found a chemical interaction between Li6PS5Cl and PVDF, resulting in partial chlorine substitution by fluorine and slightly reduced ionic conductivity.
Lucas Trassart +5 more
wiley +1 more source
Effect of Hafnium-Based Thin Film Thickness on Microstructure and Electrical of Yttrium-Doped Hafnium Oxide Ferroelectric Devices Prepared by Magnetron Sputtering. [PDF]
Ma B +7 more
europepmc +1 more source
THE COMPTON NEUTRON HAFNIUM DETECTOR: ELECTRIC CHARGE GENERATION RATE
R.V. Azhazha +8 more
openalex +1 more source
Low‐temperature passivation of SiC reveals that optical surface quality and chemical stability are not directly correlated. Ar plasma‐treated and SiNx‐passivated surfaces yield the lowest photoluminescence background, whereas CF4 plasma and ALD‐grown dielectrics introduce higher emission.
Marina Scharin‐Mehlmann +4 more
wiley +1 more source
3D atomic-scale metrology of strain relaxation and roughness in Gate-All-Around transistors via electron ptychography. [PDF]
Karapetyan S +5 more
europepmc +1 more source

