Results 31 to 40 of about 49,814 (334)

Phase Exchange Driven Wake-Up and Fatigue in Ferroelectric Hafnium Zirconium Oxide Films.

ACS Applied Materials and Interfaces, 2020
Ferroelectric hafnium zirconium oxide holds great promise for a broad spectrum of CMOS compatible and scaled microelectronic applications, including memory, low voltage transistors, and infrared sensors, among others.
Shelby S. Fields, Sean W. Smith, P. Ryan, Samantha T. Jaszewski, Ian A. Brummel, Alejandro Salanova, G. Esteves, S. Wolfley, M. Henry, P. Davids, J. Ihlefeld   +10 more
semanticscholar   +1 more source

Crystal structure of tetrakis(1,1,1,5,5,5-hexafluoroacetylacetonato)hafnium(IV)

Acta Crystallographica Section E: Crystallographic Communications, 2018
The crystal structure of the title compound, [Hf(C5HF6O2)4], has been determined. The asymmetric unit contains two Hf(hfac)4 molecules (hfac = 1,1,1,5,5,5-hexafluoroacetylacetonate); both are located on general positions and have identical structures ...
W. Franklin Schwandt, Toby J. Woods, Gregory S. Girolami   +2 more
doaj   +1 more source

Low temperature mobility in hafnium-oxide gated germanium p-channel metal-oxide-semiconductor field-effect transistors [PDF]

, 2007
Effective mobility measurements have been made at 4.2 K on high performance high-k gated germanium p-type metal-oxide-semiconductor field effect transistors with a range of Ge/gate dielectric interface state densities.
Brice De Jaeger, Chris Beer, David Leadley, Evan Parker, Gareth Nicholas, Grzegorz Gluszko, Lidia Lukasiak, Marc Meuris, Paul Zimmerman, Slawomir Szostak, Terry Whall, Yang L., Zimmerman P.   +12 more
core   +1 more source

Synthesis of Hafnium(IV) Polyaminoacetates

Molecules, 2021
The interaction of hafnium(IV) salts (oxide-dichloride, chloride, and bromide) with nitrilotriacetic acid (NTA), diethylenetriamminepentaacetic acid (DTPA), 1,2-diaminocyclohexanetetraacetic acid (CDTA), 1,3-dipropylmino-2-hydroxy N,N,N′,N′-tetraacetic ...
Alexandra T. Shulyak, Evgeniy O. Bortnikov, Alexey S. Kubasov, Nikita A. Selivanov, Alexey A. Lipengolts, Andrey P. Zhdanov, Alexander Yu. Bykov, Konstantin Yu. Zhizhin, Nikolai T. Kuznetsov   +8 more
doaj   +1 more source

Ruthenium and hafnium abundances in giant and dwarf barium stars

, 2007
We present abundances for Ru and Hf, compare them to abundances of other heavy elements, and discuss the problems found in determining Ru and Hf abundances with laboratory gf-values in the spectra of barium stars.
Allen, Allen, Arlandini, Barbuy, Boyarchuk, Böhm-Vitense, Böhm-Vitense, Cayrel, D. M. Allen, Edvardsson, G. F. Porto de Mello, Gallino, Grevesse, Gustafsson, Hill, Honda, Jorissen, Kaufer, Lawler, Luck, Lundqvist, Masseron, Meléndez, North, Piskunov, Plez, Smiljanic, Smith, Sneden, Spite, Tomkin, Yushchenko   +31 more
core   +1 more source

Physical origin of hafnium-based ferroelectricity

Computational Materials Today
This review presents an overview of the developmental history of hafnium-based ferroelectric materials and their various potential applications. It delves into the origins of hafnium-based ferroelectric phases and summarizes recent research advancements ...
Shuning Lv, Tengfei Cao, Zihe Wang, Tingxiao Xie, Shuang Gao, Gilberto Teobaldi, Qi Hu, Li-Min Liu   +7 more
doaj   +1 more source

Morphology of titanium, zirconium and hafnium nanofilms deposited onto zirconia ceramic at annealing in vacuum

Фізика і хімія твердого тіла
The morphology of titanium, zirconium, and hafnium nanofilms deposited onto zirconia after annealing in vacuum at 1400, 1500, and 1600°C was studied. Nanofilms show a tendency to fragmentation; for titanium it begins at 1400°C, for zirconium and hafnium ...
O.V. Durov, T.V. Stetsyuk
doaj   +1 more source

Hafnium carbide formation in oxygen deficient hafnium oxide thin films

, 2016
On highly oxygen deficient thin films of hafnium oxide (hafnia, HfO$_{2-x}$) contaminated with adsorbates of carbon oxides, the formation of hafnium carbide (HfC$_x$) at the surface during vacuum annealing at temperatures as low as 600 {\deg}C is ...
Alff, L., Breuer, U., Hildebrandt, E., Komissinskiy, P., Kurian, J., Rodenbücher, C., Sharath, S. U., Szot, K., Waser, R.   +8 more
core   +1 more source

Mechanisms of nonstoichiometry in HfN_1-x [PDF]

, 2009
Density functional theory is used to calculate defect structures that can accommodate nonstoichiometry in hafnium nitride: HfN1-x, 0 ≤ X ≤ 0.25. It is predicted that a mechanism assuming simple distributions of nitrogen vacancies can accurately describe ...
Ashley, N. J., Chroneos, A., Grimes, R. W., Parfitt, D.   +3 more
core   +1 more source

Hafnium germanium telluride [PDF]

Acta Crystallographica Section E Structure Reports Online, 2008
The title hafnium germanium telluride, HfGeTe(4), has been synthesized by the use of a halide flux and structurally characterized by X-ray diffraction. HfGeTe(4) is isostructural with stoichiometric ZrGeTe(4) and the Hf site in this compound is also fully occupied.
Hoseop Yun, Gyung-Joo Jang
openaire   +3 more sources