Results 21 to 30 of about 1,799,085 (182)

Nanoscale LiZnN - Luminescent Half-Heusler Quantum Dots

ACS Applied Optical Materials, 2023
Colloidal semiconductor quantum dots are a well-established technology, with numerous materials available either commercially or through the vast body of literature. The prevalent materials are cadmium-based and are unlikely to find general acceptance in most applications.
Carter-Searjeant, S, Fairclough, SM, Haigh, SJ, Zou, Y, Curry, RJ, Taylor, PN, Huang, C, Fleck, R, Machado, P, Kirkland, AI, Green, MA   +10 more
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Double Half-Heuslers [PDF]

SSRN Electronic Journal, 2019
Since their discovery around a century ago, the structure and chemistry of the multi-functional half-Heusler semiconductors have been studied extensively as three component systems. The elemental groups constituting these ternary compounds with the nominal formula XYZ are well established where most stable compositions follow a valence balanced rule (a
Shashwat Anand, Max Wood, Yi Xia, Chris Wolverton, G. Jeffrey Snyder   +4 more
openaire   +1 more source

Half-Heusler topological insulators [PDF]

MRS Bulletin, 2014
Abstract
Yan, B., de Visser, A.
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Half-Heusler alloys as emerging high power density thermoelectric cooling materials

Nature Communications, 2023
To achieve optimal thermoelectric performance, it is crucial to manipulate the scattering processes within materials to decouple the transport of phonons and electrons.
Hangtian Zhu, Wenjie Li, Amin Nozariasbmarz, Na Liu, Yu Zhang, S. Priya, Bed Poudel   +6 more
semanticscholar   +1 more source

Half-Heusler thermoelectric materials: NMR studies [PDF]

Journal of Applied Physics, 2020
We report 59Co, 93Nb, and 121Sb nuclear magnetic resonance measurements combined with density functional theory (DFT) calculations on a series of half-Heusler semiconductors, including NbCoSn, ZrCoSb, TaFeSb, and NbFeSb, to better understand their electronic properties and general composition-dependent trends.
Yefan Tian, Nader Ghassemi, Wuyang Ren, Hangtian Zhu, Shan Li, Qian Zhang, Zhiming Wang, Zhifeng Ren, Joseph H. Ross   +8 more
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Grain Boundary Phases in NbFeSb Half‐Heusler Alloys: A New Avenue to Tune Transport Properties of Thermoelectric Materials

Advanced Energy Materials, 2023
Many thermoelectric materials benefit from complex microstructures. Grain boundaries (GBs) in nanocrystalline thermoelectrics cause desirable reduction in the thermal conductivity by scattering phonons, but often lead to unwanted loss in the electrical ...
Ruben Bueno Villoro, Duncan Zavanelli, C. Jung, D. Mattlat, Raana Hatami Naderloo, Nicolás Pérez, K. Nielsch, G. J. Snyder, C. Scheu, R. He, Siyuan Zhang   +10 more
semanticscholar   +1 more source

Magnetotransport in single-crystal half-Heusler compounds [PDF]

Physical Review B, 2004
15 pages, 12 ...
Ahilan, K., Bennett, M. C., Aronson, M. C., Anderson, N. E., Canfield, Paul, Munoz-Sandoval, E., Gortenmulder, T., Hendrikx, R., Mydosh, J. A.   +8 more
openaire   +4 more sources

First-Principles Studies on the Physical Properties of the Half Heusler RbNbCd and RbNbZn Compounds: A Promising Material for Thermoelectric Applications

Crystals, 2023
This work focuses on study of the structural, electronic, thermodynamic and thermoelectric properties of RbNbCd and RbNbZn Half Heusler (HH), utilizing a full-potential linearized augmented plane wave (FP-LAPW) approach and the Boltzmann transport ...
D. Behera, A. A. Rached, Abdessalem Bouhenna, M. Salah, A. Shaker, S. Mukherjee   +5 more
semanticscholar   +1 more source

Vacancy-mediated anomalous phononic and electronic transport in defective half-Heusler ZrNiBi

Nature Communications, 2023
Studies of vacancy-mediated anomalous transport properties have flourished in diverse fields since these properties endow solid materials with fascinating photoelectric, ferroelectric, and spin-electric behaviors.
Wuyang Ren, Wenhua Xue, Shuping Guo, R. He, L. Deng, Shaowei Song, A. Sotnikov, K. Nielsch, J. van den Brink, G. Gao, Shuo Chen, Yimo Han, Jiang Wu, C. Chu, Zhiming Wang, Yumei Wang, Z. Ren   +16 more
semanticscholar   +1 more source

Enhancing the Thermoelectric Properties via Modulation of Defects in P‐Type MNiSn‐Based (M = Hf, Zr, Ti) Half‐Heusler Materials

Advanced Functional Materials, 2023
The thermoelectric figure‐of‐merit (zT) of p‐type MNiSn (M = Ti, Zr, or Hf) half‐Heusler compounds is lower than their n‐type counterparts due to the presence of a donor in‐gap state caused by Ni occupying tetrahedral interstitials.
Xin Ai, Binghua Lei, M. Cichocka, L. Giebeler, R. Villoro, Siyuan Zhang, C. Scheu, Nicolás Pérez, Qihao Zhang, A. Sotnikov, David J. Singh, K. Nielsch, R. He   +12 more
semanticscholar   +1 more source