Results 121 to 130 of about 9,665,764 (300)

Enhanced gamma and neutron shielding performance of silicon-tungsten composites: A Geant4 simulation study

open access: yesNuclear Engineering and Technology
The development of effective radiation shielding materials is crucial for minimizing the harmful effects of ionizing radiation on human health and the environment.
Bashir Garba Aminu   +3 more
doaj   +1 more source

Wearable Smart Patches on Sustainable Chitosan With Reversible Microbial Growth‐Inhibitory Properties

open access: yesAdvanced Functional Materials, EarlyView.
ABSTRACT Chitosan, a polysaccharide upcycled from biowaste, has long promised sustainable, biocompatible, and antimicrobial films and devices, an appeal reinforced by its recent regulatory recognition, with several chitosan‐based antibacterial dressings gaining clearance through the Food and Drug Administration's 510(k) pathway.
Jacopo Nicoletti   +16 more
wiley   +1 more source

An attenuation Layer for Electromagnetic Shielding in X- Band Frequency

open access: yesIranian Journal of Health, Safety and Environment, 2015
Uncontrolled exposure to X-band frequency leads to health damage. One of the principles of radiation protection is shielding. But, conventional shielding materials have disadvantages.
vida Zaroushani   +2 more
doaj  

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

open access: yesAdvanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner   +14 more
wiley   +1 more source

WITHDRAWN: Characterization of X-ray beam for Half and Quarter Value Layers

open access: yes
Abstract The full text of this preprint has been withdrawn by the authors as it was submitted and made public without the full consent of all the authors. Therefore, the authors do not wish this work to be cited as a reference. Questions should be directed to the corresponding author.
GIRMA BINIYAM SOLOMON   +3 more
openaire   +1 more source

Omnipolar Magnetic Field Detection by Superlattice‐Based Hall Sensor

open access: yesAdvanced Functional Materials, EarlyView.
Magnetic‐field‐induced electronic switching is demonstrated in unit‐cell‐engineered La0.7Sr0.3MnO3–BiFeO3 superlattices. Distinct substrate terminations modify magnetic and transport properties. Hall resistance measurements show omnipolar, hysteretic anomalous Hall switching above the Curie temperature, arising from Fe─Mn interfacial exchange, enabling
Mark Huijben   +6 more
wiley   +1 more source

Achieving High ON State Current through Ferroelectric Polarization‐Dependent Interfacial Resistance Switching in Undoped Orthorhombic HfO2 Films

open access: yesAdvanced Functional Materials, EarlyView.
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand   +13 more
wiley   +1 more source

The measurement errors of X-ray devices features

open access: yesТехнологія та конструювання в електронній апаратурі, 2011
Expressions for calculating the measurement errors of X-ray devices features are given as follows: mean photon energy, homogeneity coefficient, the first and the second half-value layer (1st HVL, 2nd HVL). Comparison of errors is organized at measurement
S. A. Dushkin   +4 more
doaj  

Electrode and Microstructure Dependence of Oxygen Diffusion in Ferroelectric Hafnium Zirconium Oxide Thin Films

open access: yesAdvanced Functional Materials, EarlyView.
Significant nanoscale oxygen diffusion coefficient variations are measured in ferroelectric hafnium zirconium oxide films with grain boundaries and electrode interfaces exhibiting values 104 times larger than the grain cores. Overall coefficients are 10X larger for films prepared with metal nitride electrodes compared to refractory metals. New insights
Liron Shvilberg   +6 more
wiley   +1 more source

Penentuan Nilai Half Value Layer (HVt) pada Sinar X dengan Menggunakan Attenuatur Aluminium (AI), Tembaga (Cu) dan Timah (Sn)

open access: yes, 2018
1 57026008Half Value Layer (HVL) has been done on X-rays using Aluminum (Al), Copper (Cu) and Lead (Sn) at University Hospital of Norlh Sumatera. Half Value Layer (HVL) is: a layer or thick material that makes the intensity to half of the original ...
Sidauruk, Lincewati Saragi
core  

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