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Probing interplay of topological properties and electron correlation in TaIrTe<sub>4</sub> via nonlinear Hall effect. [PDF]
Nat CommunJiang H +11 more
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Harnessing orbital Hall effect in spin-orbit torque MRAM. [PDF]
Nat CommunGupta R +10 more
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ON THE THEORY OF THE HALL EFFECT
Canadian Journal of Physics, 1951A phenomenological theory of the Hall effect is applied to: (1) the effect of an inhomogenous magnetic field on the Hall effect in thin layers (par. 4, par. 5); (2) the magnetic increase of resistivity under the same conditions (par. 6); (3) the Hall effect in a homogenous magnetic field in inhomogenous layers (par. 7–9).
Koppe, H., Bryan, J. M.
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Science, 1983
Quantization of the Hall effect is one of the most surprising discoveries in recent experimental solid-state research. At low temperatures and high magnetic fields the ratio of the Hall voltage to the electric current in a two-dimensional system is quantized in units of h/e 2 , where h
H L, Stormer, D C, Tsui
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Quantization of the Hall effect is one of the most surprising discoveries in recent experimental solid-state research. At low temperatures and high magnetic fields the ratio of the Hall voltage to the electric current in a two-dimensional system is quantized in units of h/e 2 , where h
H L, Stormer, D C, Tsui
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Physica B+C, 1983
Basically, the quantum Hall effect (QHE) has nothing to do with atomic physics. Semiconductors are normally used to observe this quantum phenomenon, and the 1023 atoms per cubic centimeter of a semiconductor represent such a complicated system of interacting atoms that its electronic properties are normally described by phenomenological quantities and ...
Klaus v. Klitzing, Günther Ebert
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Basically, the quantum Hall effect (QHE) has nothing to do with atomic physics. Semiconductors are normally used to observe this quantum phenomenon, and the 1023 atoms per cubic centimeter of a semiconductor represent such a complicated system of interacting atoms that its electronic properties are normally described by phenomenological quantities and ...
Klaus v. Klitzing, Günther Ebert
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Reviews of Modern Physics, 1984
tory since one may come to the conclusion that such a complicated system like a semiconuctor is not useful for very fundamental discoveries. Indeed, most of the experimental data in solid state physics are analyzed on the basis of simplified theories, and very often the properties of a semiconductor device is described by empirical formulas since the ...
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tory since one may come to the conclusion that such a complicated system like a semiconuctor is not useful for very fundamental discoveries. Indeed, most of the experimental data in solid state physics are analyzed on the basis of simplified theories, and very often the properties of a semiconductor device is described by empirical formulas since the ...
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IBM Journal of Research and Development, 1957
A new method for handling the Boltzmann equation is used to obtain, without approximation, a general formula for the linear Hall effect in a solid electronic conductor. Expressions for the conductivity in no magnetic field and for the quadratic magnetoconductivity are also obtained.
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A new method for handling the Boltzmann equation is used to obtain, without approximation, a general formula for the linear Hall effect in a solid electronic conductor. Expressions for the conductivity in no magnetic field and for the quadratic magnetoconductivity are also obtained.
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Physical Review, 1954
Both the unusually large magnitude and strong temperature dependence of the extraordinary Hall effect in ferromagnetic materials can be understood as effects of the spin-orbit interaction of polarized conduction electrons. It is shown that the interband matrix elements of the applied electric potential energy combine with the spin-orbit perturbation to
Karplus, Robert, Luttinger, J. M.
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Both the unusually large magnitude and strong temperature dependence of the extraordinary Hall effect in ferromagnetic materials can be understood as effects of the spin-orbit interaction of polarized conduction electrons. It is shown that the interband matrix elements of the applied electric potential energy combine with the spin-orbit perturbation to
Karplus, Robert, Luttinger, J. M.
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International Journal of Theoretical Physics, 1998
1The gap equation for the electron self-energy function is considered in the framework of (2 1 1)-dimensional quantum electrodynamics. The filling factor n for the quantum Hall effect is related to a free parameter l by considering the development of the gap equation.
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1The gap equation for the electron self-energy function is considered in the framework of (2 1 1)-dimensional quantum electrodynamics. The filling factor n for the quantum Hall effect is related to a free parameter l by considering the development of the gap equation.
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