Results 21 to 30 of about 264,866 (394)
Avalanche noise characteristics of single Al/sub x/Ga/sub 1-x/As(0.3 [PDF]
, 2005 Avalanche multiplication and excess noise have been measured on a series of Al/sub x/Ga/sub 1-x/As-GaAs and GaAs-Al/sub x/Ga/sub 1-x/As (x=0.3,0.45, and 0.6) single heterojunction p/sup +/-i-n/sup +/ diodes.
Chia, C.K. +4 more
core +1 more source
Understanding of MoS2/GaN Heterojunction Diode and its Photodetection Properties
Scientific Reports, 2018 Fabrication of heterojunction between 2D molybdenum disulfide (MoS2) and gallium nitride (GaN) and its photodetection properties have been reported in the present work.
Monika Moun +4 more
doaj +1 more source
Analysis of SiC/Si Heterojunction Band Energy and Interface State Characteristics for SiC/Si VDMOS
Micromachines, 2023 SiC/Si and GaN/Si heterojunction technology has been widely used in power semiconductor devices, and SiC/Si VDMOS and GaN/Si VDMOS were proposed in our previous paper.
Xin Yang, Baoxing Duan, Yintang Yang
doaj +1 more source
Modeling, synthesis, and characterization of thin film copper oxide for solar cells [PDF]
, 2009 The modeling, growth, and characterization of Copper Oxide thin films for solar cell applications are reported. Cu_2O has several attractive properties which include its direct band gap (Eg=2.17 eV) for use in photoelectrolysis of water and use in ...
Atwater, Harry A., Darvish, Davis S.
core +1 more source
Insights into tunnel FET-based charge pumps and rectifiers for energy harvesting applications [PDF]
, 2017 In this paper, the electrical characteristics of tunnel field-effect transistor (TFET) devices are explored for energy harvesting front-end circuits with ultralow power consumption.
Moll Echeto, Francisco de Borja +2 more
core +2 more sources
C-axis oriented growth of ZnO nanorods over Mg:GaN for improved heterojunction device performance
AIP Advances, 2019 Heterojunction device performance has strong dependence on its junction interface. ZnO deposition over GaN to achieve a heterojunction is challenging as it usually requires high temperature and vacuum processing.
Lawrence Sylaja Vikas +1 more
doaj +1 more source
Materials Science for Energy Technologies, 2018 Pairing tungsten oxide (WO3) and bismuth vanadate (BiVO4) to form heterojunction photoanode is a very promising strategy to attain the enhanced photoelectrochemical (PEC) water splitting efficiency. In fact, the PEC efficiency of WO3/BiVO4 heterojunction
Basanth S. Kalanoor +2 more
doaj +1 more source
Advanced Materials Interfaces, 2023 Fabricating a heterojunction photodetector is efficient to take advantage of the built‐in electric field formed by heterojunction and thus improve the performance of photodetector.
Zunxian Lv +7 more
doaj +1 more source
Origin of passivation in hole-selective transition metal oxides for crystalline silicon heterojunction solar cells [PDF]
, 2017 Transition metal oxides (TMOs) have recently demonstrated to be a good alternative to boron/phosphorous doped layers in crystalline silicon heterojunction solar cells.
Alcubilla González, Ramón +3 more
core +2 more sources
Molecules, 2020 In the current work, flexible diodes with flat heterojunction and dispersed heterojunction architecture were manufactured with to study the behavior of thin films of disodium phthalocyanine (Na2Pc).
Leon Hamui +3 more
doaj +1 more source