Results 351 to 360 of about 231,050 (376)
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Experiments on Ge-GaAs Heterojunctions
IRE Transactions on Electron Devices, 1962Abstract The electrical characteristics of Ge-GaAs heterojunctions, made by depositing Ge epitaxially on GaAs substrates, are described. I–V and electro-optical characteristics are consistent with a model in which the conduction- and valence-band edges at the interface are discontinuous.
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Design principle of S-scheme heterojunction photocatalyst
Journal of Materials Science & Technology, 2022Quanlong Xu+3 more
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Efficient planar heterojunction perovskite solar cells by vapour deposition
Nature, 2013Mingzhen Liu, M. Johnston, H. Snaith
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Theory of Heterojunction Discontinuities.
1976Abstract : The problem of theoretically understanding and predicting the energy band lineups at abrupt semiconductor heterojunctions was investigated. Methods were developed that represent a significant advance in the problem and that permit a prediction of the band edge discontinuities from the known energy band structures, by means of self-consistent
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Heterojunction catalyst in electrocatalytic water splitting
Coordination chemistry reviews, 2021Zhenxing Li+5 more
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Optical Properties of Heterojunctions and Heterojunction Lasers
1972D.L. Feucht, A. G. Milnes
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