Results 191 to 200 of about 497,014 (306)

Heterointerface‐Functionalized Photoelectric Response of Metal‐Oxide Schottky Photodiode for Intelligent Fire Detection

open access: yesAdvanced Science, Volume 13, Issue 9, 13 February 2026.
A heterointerface‐functionalized Schottky photodiode (HF‐SPD) is developed to explore the photoelectric capabilities of low‐temperature oxide semiconductors. Besides the remarkable UV detection capability, the bias‐tunable photo response endows HF‐SPD with the unique wavelength selectivity.
Yuyang Cai   +13 more
wiley   +1 more source

Empowering Flexible Electronics with Piezoelectric Nanogenerators: Breakthroughs from Energy Harvesting to Intelligent Sensing

open access: yesAdvanced Science, Volume 13, Issue 7, 3 February 2026.
This review systematically summarizes recent advances in self‐powered flexible sensing and energy storage systems based on piezoelectric nanogenerators (PENGs). It highlights their fundamental mechanisms, structural designs, and applications in health monitoring, e‐skin, and tactile sensing. The integration of PENGs with supercapacitors or batteries is
Wu‐Lin Xin   +8 more
wiley   +1 more source

Molecular Cluster‐Controlled Quasi‐Epitaxial CZTSSe/CdS Heterojunction Enables 12.3% Efficiency of Flexible Solar Cells

open access: yesAdvanced Science, Volume 13, Issue 9, 13 February 2026.
By controlling the synthesis of CdS molecular clusters, a quasi‐epitaxial heterojunction is directly constructed during chemical bath deposition, enabling flexible kesterite solar cells to achieve an efficiency of 12.3%. Abstract Flexible Cu2ZnSn(S,Se)4 (CZTSSe) solar cells have garnered significant attention in photovoltaics.
Weihao Xie   +8 more
wiley   +1 more source

XHEMTs on Ultrawide Bandgap Single‐Crystal AlN Substrates

open access: yesAdvanced Electronic Materials, Volume 12, Issue 3, 4 February 2026.
AlN/GaN/AlN XHEMTs [single‐crystal (“X‐tal”) high‐electron‐mobility transistors] are built on bulk AlN substrates with a 20 nm pseudomorphic GaN channel. This coherent epitaxial double heterostructure promises low‐defect, thermally efficient nitride electronics for next‐generation RF technology.
Eungkyun Kim   +6 more
wiley   +1 more source

MIM‐Diode‐Like Rectification in Lateral 1T/1H/1T‐MoS2 Homojunctions via Interfacial Dipole Engineering

open access: yesAdvanced Electronic Materials, Volume 12, Issue 3, 4 February 2026.
The metallic 1T and semiconducting 1H phases of MoS2 enable phase‐engineered 1T/1H/1T homojunctions that exhibit MIM‐diode‐like rectification without dissimilar electrodes. Asymmetric 1T/1H interfaces induce interface dipoles and a built‐in potential drop across the 1H barrier, creating a trapezoidal tunnel barrier at zero bias and yielding diode‐like ...
Elias Eckmann   +3 more
wiley   +1 more source

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