Results 191 to 200 of about 497,014 (306)
Predictive Modeling and Data-Driven Optimization of CdFe<sub>2</sub>O<sub>4</sub>/p-Si Heterojunction Electrical Behavior. [PDF]
Yahyaoui N +3 more
europepmc +1 more source
A heterointerface‐functionalized Schottky photodiode (HF‐SPD) is developed to explore the photoelectric capabilities of low‐temperature oxide semiconductors. Besides the remarkable UV detection capability, the bias‐tunable photo response endows HF‐SPD with the unique wavelength selectivity.
Yuyang Cai +13 more
wiley +1 more source
High-Temperature Electrical Transport Behavior of p-Doped Boron Diamond Film/n-WS<sub>2</sub> Nanosheet Heterojunction. [PDF]
Li C, Sang D, Shi Y, Ge S, Du L, Wang Q.
europepmc +1 more source
This review systematically summarizes recent advances in self‐powered flexible sensing and energy storage systems based on piezoelectric nanogenerators (PENGs). It highlights their fundamental mechanisms, structural designs, and applications in health monitoring, e‐skin, and tactile sensing. The integration of PENGs with supercapacitors or batteries is
Wu‐Lin Xin +8 more
wiley +1 more source
Harnessing Entropic Effects from Interlayer Coupling to Modulate Ion Transport and Rectification in Multilayered Janus Graphene Nanopores. [PDF]
Li S +5 more
europepmc +1 more source
By controlling the synthesis of CdS molecular clusters, a quasi‐epitaxial heterojunction is directly constructed during chemical bath deposition, enabling flexible kesterite solar cells to achieve an efficiency of 12.3%. Abstract Flexible Cu2ZnSn(S,Se)4 (CZTSSe) solar cells have garnered significant attention in photovoltaics.
Weihao Xie +8 more
wiley +1 more source
Photoelectric Performance of Two-Dimensional n-MoS<sub>2</sub> Nanosheets/p-Heavily Boron-Doped Diamond Heterojunction at High Temperature. [PDF]
Shen D +5 more
europepmc +1 more source
XHEMTs on Ultrawide Bandgap Single‐Crystal AlN Substrates
AlN/GaN/AlN XHEMTs [single‐crystal (“X‐tal”) high‐electron‐mobility transistors] are built on bulk AlN substrates with a 20 nm pseudomorphic GaN channel. This coherent epitaxial double heterostructure promises low‐defect, thermally efficient nitride electronics for next‐generation RF technology.
Eungkyun Kim +6 more
wiley +1 more source
Recent Developments and Challenges of Edge Termination Techniques for Vertical Diamond Schottky Barrier Diodes. [PDF]
Li G +5 more
europepmc +1 more source
The metallic 1T and semiconducting 1H phases of MoS2 enable phase‐engineered 1T/1H/1T homojunctions that exhibit MIM‐diode‐like rectification without dissimilar electrodes. Asymmetric 1T/1H interfaces induce interface dipoles and a built‐in potential drop across the 1H barrier, creating a trapezoidal tunnel barrier at zero bias and yielding diode‐like ...
Elias Eckmann +3 more
wiley +1 more source

