Results 281 to 290 of about 497,014 (306)

Current transport and capacitance-voltage characteristics of Sb2Se3/n-Si heterojunction diode prepared by electron beam evaporation

Materials Research Express, 2018
The Sb2Se3 thin film was successfully deposited on the n-Si substrate using an electron beam evaporated technique. The structural investigation was done by means of x-ray diffraction analysis.
M. Nasr, A. Mansour, I. M. El Radaf
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The temperature dependence of current–voltage characteristics of V2O5/p-Si heterojunction diode

Journal of Materials Science: Materials in Electronics, 2021
A. Deniz
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Recombination Currents in a p-n Heterojunction Diode

Physica Status Solidi (a), 1977
The effect of carrier recombination in the depletion region on the I-U characteristics of a hetero-junction diode is considered. It is found, that recombination currents affect the I-U characteristics of symmetrically doped heterojunction diodes with large energy band offsets for the majority carrier type in the large gap material differently than ...
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Comparison studies of Zn-doped CuO thin films deposited by manual and automated nebulizer-spray pyrolysis systems and their application in heterojunction-diode fabrication

Journal of Sol-Gel Science and Technology, 2021
V. Jagadeesan, V. Subramaniam
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Evaporated thin-film CdSe/Se heterojunction diodes

1969 International Electron Devices Meeting, 1969
Thin-film vacuum evaporated diodes have been fabricated which exhibit excellent rectification properties, including: (a) 70 volts reverse breakdown, (b) greater than 106rectification ratio over a range of 6 to 30 volts, and (c) 0.5 volt forward offset voltage.
R.M. Moore, C.J. Busanovich
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Green synthesis of copper sulfide (CuS) nanostructures for heterojunction diode applications

Journal of Materials Science: Materials in Electronics, 2021
S. Deb, P. Kalita
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Spontaneous radiation transfer in heterojunction laser diodes

Soviet Journal of Quantum Electronics, 1979
Calculations of the parameter ƒ, which determines the proportion of the spontaneous radiation energy transmitted by the passive GaAlAs layers and absorbed outside the active layer, are presented. The value of ƒ is required to calculate the temperature distribution inside a laser diode.
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Tunneling time through heterojunction double barrier diodes

Superlattices and Microstructures, 1987
Abstract The quantum mechanical tunneling time through a heterojunction double barrier diode (DBD) is calculated for all incident electron energies (on-resonance and off-resonance). The well-known result of Eisenbud and Wigner is used, and simple analytical results are obtained. The longest time delay occurs at the on-resonance incident energy due to
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Enhancement of the electrical performance of TiO2/p-Si heterojunction diode by Gadolinium doping

Applied Physics A, 2020
Serif Ruzgar
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heterojunction diode

2000
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