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Semiconductor Materials and Heterostructures
2011We give a survey of semiconductor materials suitable for preparation of semiconductor lasers. The materials are compounds of elements of the third and fifth group of the periodic table or compounds of elements of the second and the sixth group. The compounds have energy gaps corresponding to gap frequencies ranging from the infrared to the near UV.
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Material and Heterostructure Interface Characterization
2020The focus of this chapter is to characterize individual materials and the interface of graphene-\(\text {MoS}_2\) heterostructures. Various optical characterization such as Raman spectroscopy, and photoluminescence study etc. are utilized to identify layer numbers, interlayer coupling properties etc.
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Multiferroic Heterostructures Integrating Ferroelectric and Magnetic Materials
Advanced Materials, 2015Multiferroic heterostructures can be synthesized by integrating monolithic ferroelectric and magnetic materials, with interfacial coupling between electric polarization and magnetization, through the exchange of elastic, electric, and magnetic energy. Although the nature of the interfaces remains to be unraveled, such cross coupling can be utilized to ...
Jia-Mian, Hu +2 more
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Toxicity of Two-Dimensional Layered Materials and Their Heterostructures
Bioconjugate Chemistry, 2019Two-dimensional layered materials (2D LMs) are taking the scientific world by storm. Graphene epitomizes 2D LMs with many interesting properties and corresponding applications. Following the footsteps of graphene, many other types of 2D LMs such as transition metal dichalcogenides, black phosphorus, and graphitic-phase C3N4 nanosheets are emerging to ...
Eveline Tan +5 more
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Morphology of 2D Materials and Their Heterostructures
2017The morphological structure of materials and devices is often linked closely with the mechanical integrity and other such properties of devices.
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2D materials and heterostructures for applications in optoelectronics
SPIE Proceedings, 2015We present the realization and optoelectronic characterization of p-n junctions based on two-dimensional semiconductors. Such junctions may be realized by lateral or vertical arrangement of atomically thin p-type and n-type materials. In particular, a WSe2 monolayer p-n junction, formed by electrostatic doping using a pair of split gate electrodes, and
Thomas Mueller +2 more
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Architecture and Properties of Molecular Heterostructures and Materials
ECS Meeting Abstracts, 2012Abstract not Available.
Yuliang Li, Huibiao Liu, Yongjun Li
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Materials Photonic Bandgap in Heterostructure
2013In the present communication We found the large band gap in photonic heterostructure (PC1/PC2) composed of metamaterials and magnetic materials by using simple transfer matrix method. The meta-materials have the unusual electromagnetic properties having negative refractive index.
Kumar, Arun, G. N. Pandey
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