Results 241 to 250 of about 119,836 (277)

Ferroelectrically switched valley-dependent transmission in SnTe-PbTe-SnTe monolayer lateral heterostructures. [PDF]

Nat Commun
Chang K, Ji JR, Gao Z, Huamán A, Cao RQ, Wang WL, Yue C, Liu C, Barraza-Lopez S, Parkin SSP.   +9 more
europepmc   +1 more source

Visualizing Nanoscale Charge Flows in Multi-Dimensional WSe2/GaAs Vertical Diodes

Piazza V, Zendrini M, Blaga C, Wodzislawski K, Rudra A, Banerjee M, Morral AFi.   +6 more
europepmc   +1 more source

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Heterostructured Magnetic Nanotubes

Langmuir, 2006
Heterostructured magnetic tubes with submicrometer dimensions were assembled by the layer-by-layer deposition of polyelectrolytes and nanoparticles in the pores of track-etched polycarbonate membranes. Multilayers composed of poly(allylamine hydrochloride) and poly(styrene sulfonate) assembled at high pH (pH > 9.0) were first assembled into the pores ...
Daeyeon, Lee, Robert E, Cohen, Michael F, Rubner   +2 more
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Terahertz semiconductor-heterostructure lasers

Summaries of Papers Presented at the Lasers and Electro-Optics. CLEO '02. Technical Diges, 2002
Semiconductor devices have become indispensable for generating electromagnetic radiation in everyday applications. Visible and infrared diode lasers are at the core of information technology, and at the other end of the spectrum, microwave and radio-frequency emitters enable wireless communications. But the terahertz region (1-10 THz; 1 THz = 10(12) Hz)
KOEHLER R., TREDICUCCI A., BELTRAM F., BEERE H.E., LINFIELD E.H., DAVIES A.G., RITCHIE D.A., IOTTI, Rita Claudia, ROSSI, FAUSTO   +8 more
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Superconductor-Ferromagnet Heterostructures

2007
no ...
Buzdin, Alexandre I., Faure, M., Houzet, M.   +2 more
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Heterostructure Injection Lasers

IEEE Transactions on Microwave Theory and Techniques, 1975
The utilization of the nearly ideal heterojunction that can be achieved between GaAs and AL/sub x/ Ga/sub 1-x/As to confine both light and electrical carriers has lead to the evolution of several new classes as injection lasers with very low room-temperature current-density thresholds for lasing (/spl lsim/ 1000 A/cm/sup 2/), and structures whose ...
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Nanowire Heterostructures

Annual Review of Materials Research, 2013
The nanoscale diameter and high aspect ratio of nanowires are the foundation of fascinating structure-property relationships derived from confinement, interface effects, and mechanical degrees of freedom. When heterostructures are formed by high-quality growth of dissimilar materials on or within nanowires, the interactions of the low-dimensional ...
Jerome K. Hyun, Shixiong Zhang, Lincoln J. Lauhon   +2 more
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Physics of Heterostructures and Heterostructure Devices

1988
This topic belongs to the broader one of scale-dependent properties of inhomogeneous semiconductors. Most semiconductor devices depend on characteristic lengths, such as screening constant, carrier recombination length, inverse of pair creation rate, and their functioning is based on spatial inhomogeneities.
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Monolayer mosaic heterostructures

Nature Nanotechnology, 2022
Can Liu, Kaihui Liu
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