Orbital-selective band engineering realizes high zT in p-type Ru2Ti1−xHfxSi full-Heusler thermoelectrics [PDF]
Heusler compounds have emerged as important thermoelectric materials due to their combination of promising electronic transport properties, mechanical robustness and chemical stability – key aspects for practical device integration. While a wide range of
Fabian Garmroudi +6 more
doaj +2 more sources
Observation of a topologically non-trivial surface state in half-Heusler PtLuSb (001) thin films [PDF]
Half-Heusler compounds are predicted to bear topological properties, which is yet to be experimentally evidenced. Here, Logan et al.report experimental evidence of a topological surface state in epitaxially grown thin films of the half-Heusler compound ...
J. A. Logan +8 more
doaj +3 more sources
In this study, the non-isothermal kinetics of the martensitic transition from 14M modulated martensite to austenite phase in Ni55Fe19Ga26 ribbons obtained by melt-spinning has been analyzed. The proximity of the martensitic transition to room temperature
Alejandro F. Manchón-Gordón +6 more
doaj +1 more source
Prediction of electronic and half metallic properties of Mn_2YSn (Y = Mo, Nb, Zr) Heusler alloys
We investigate the structural, electronic and magnetic properties of the full Heusler compounds Mn_2YSn (Y = Mo, Nb, Zr) by first- principles density functional theory using the generalized gradient approximation.
S. Zeffane +6 more
doaj +1 more source
Topological nontrivial nature are the latest phases to be discovered in condensed matter physics with insulating bulk band gaps and topologically protected metallic surface states; they are one of the current hot topics because of their unique properties
A. Boughena +4 more
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GGA and GGA Plus U Study of Half-Metallic Quaternary Heusler Compound CoCrScSn
The structural, mechanical, electronic, magnetic, and half-metallic properties of quaternary Heusler compound CoCrScSn are studied using the GGA and GGA + U method based on first-principles calculations.
Chuankun Zhang +5 more
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A Systematic Approach for Semiconductor Half-Heusler
The key to designing a half-Heusler begins from the understanding of atomic interactions within the compound. However, this pool of knowledge in half-Heusler compounds is briefly segregated in many papers for specific explanations.
Wei Yang Samuel Lim +7 more
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Preparation and structural properties of thin films and multilayers of the Heusler compounds Cu2MnAl, Co2MnSn, Co2MnSi and Co2MnGe [PDF]
We report on the preparation of thin films and multilayers of the intermetallic Heusler compound CuMnAl, Co2MnSn, Co2MnSi and Co2MnGe by rf-sputtering on MgO and Al2O3 substrates.
A Bergmann +28 more
core +1 more source
Heusler alloys for spintronic devices: review on recent development and future perspectives
Heusler alloys are theoretically predicted to become half-metals at room temperature (RT). The advantages of using these alloys are good lattice matching with major substrates, high Curie temperature above RT and intermetallic controllability for spin ...
Kelvin Elphick +7 more
doaj +1 more source
High-throughput design of perpendicular magnetic anisotropy at quaternary Heusler and MgO interfaces
Heusler alloys combined with MgO interfaces exhibit interfacial perpendicular magnetic anisotropy, making them attractive for energy-efficient spintronic technologies.
Sicong Jiang, Kesong Yang
doaj +1 more source

