Results 171 to 180 of about 8,229 (219)

Use of Hexagonal Boron Nitride as Reinforcing Agent for Polyamide 11 and the Effect of Surface Treatment with Aminosilane

Macromolecular Materials and Engineering, Volume 311, Issue 8, August 2026.
APTES treatment improves filler‐matrix adhesion and mechanical performance in PA11/h‐BN composites, while thermal conductivity gains are mainly governed by h‐BN loading and platelet orientation. Pa11/hBN composites are a sustainable solution for high‐performance electronic and thermal‐management applications. ABSTRACT In this work, the incorporation of
Laura Aliotta, Vito Gigante, Giulia Bargagli, Sirui Liu, Mikael Hedenqvist, Andrea Lazzeri   +5 more
wiley   +1 more source

Mechanical, Viscoelastic, Thermal and Morphological Properties of Hexagonal Boron Nitride (h-BN)-Doped Polyester Nano-Gelcoat Under Hydrothermal Aging. [PDF]

Polymers (Basel)
Demircan G, Ozen M, Cakmak C, Celik BN, Acikgoz A, Kisa M.   +5 more
europepmc   +1 more source

Towards Bio‐Based Benzoxazines (2015–2025): A Critical Review of Renewable Building Blocks, Formaldehyde‐Free Aldehydes, and ECHA Hazard Landscape

Polymers for Advanced Technologies, Volume 37, Issue 8, August 2026.
ABSTRACT This review provides a critical overview of research on fully bio‐based benzoxazines over the period 2015–2025. A bibliometric analysis based on the Web of Science database is used to map how the field has evolved and to identify the renewable building blocks that have been most widely adopted.
Elizabeth Alvarez Perez, Alice Mija
wiley   +1 more source

Observation of Boron Vacancy Concentration in Hexagonal Boron Nitride at Nanometer Scale. [PDF]

Nano Lett
Kikkawa J, Shinei C, Chen J, Masuyama Y, Yamazaki Y, Mizoguchi T, Kimoto K, Taniguchi T, Teraji T.   +8 more
europepmc   +1 more source

The Evolution of Semiconductor Devices: From Transistors to Quantum and Neuromorphic Computing

physica status solidi (RRL) – Rapid Research Letters, Volume 20, Issue 8, August 2026.
This review presents the evolution of semiconductor devices from BJTs to fin field‐effect transistors (FinFETs), nanowire, and carbon nanotube transistors. It highlights emerging materials, including SiC and GaN, and examines neuromorphic and quantum computing, industry applications, performance benchmarks, challenges, and future directions.
Manoharan Subramanian, Mahalakshmi Balan, Ananthi Kaliyamoorthy, Esakki Muthu Sankaran, Govindaraj Vellingiri, Gianluca Gatto, Amit Kumar   +6 more
wiley   +1 more source

The Development of Hexagonal Boron Nitride Crystal Growth Technologies and Their Applications in Neutron Detection. [PDF]

Nanomaterials (Basel)
Song W, Liu D, Wang F, Zhang L.
europepmc   +1 more source

Nanoscale Band Gap Modulation and Dual Moiré Superlattices of Hexagonal Boron Nitride Weakly Coupled to Graphite. [PDF]

ACS Nano
J R Costa F, Arribas D, G L Brito T, Cheng TS, Bradford J, Thompson A, Saywell A, Mellor CJ, Beton PH, Novikov SV, Plo J, Gil B, Cassabois G, Zagonel LF, Kuhnke K, Kern K, Rosławska A.   +16 more
europepmc   +1 more source

Characterization Techniques for Graphene, Graphene Oxide, and Reduced Graphene Oxide: A State‐of‐the‐Art Review Guided by International Standards

ChemistrySelect, Volume 11, Issue 32, 24 August 2026.
Characterization of biomass‐derived “graphene” materials against international standards (ASTM E3220‐25; ISO/TS 80004‐13:2024) reveals that the majority fail normative classification criteria and are more accurately identified as turbostratic graphitized carbon or graphite nanoplatelets. A minimum six‐technique protocol—integrating Raman, XPS, AFM, ICP‐
Alan Baio Bonel Diniz, Andrea Cressoni de Conti   +1 more
wiley   +1 more source

Defect Engineering in Large-Scale CVD-Grown Hexagonal Boron Nitride: Formation, Spectroscopy, and Spin Relaxation Dynamics. [PDF]

Small
Vlassiouk IV, Wu YC, Puretzky A, Liang L, Lasseter J, Dryzhakov B, Gallagher I, Ghosh S, Lavrik N, Dyck O, Lupini AR, Checa M, Collins L, Meyer HM, Zhao H, Likhi F, Xiao K, Ivanov I, Glasgow D, Tselev A, Lawrie B, Smirnov S, Randolph SJ.   +22 more
europepmc   +1 more source

Optoelectronics of Single Mixed Dislocations in Van Der Waals Core‐Shell Nanowires

Small, Volume 22, Issue 44, 7 August 2026.
Ge1‐xSnxS van der Waals core‐shell nanowires can host single helical dislocations whose character is tunable from a pure screw to a majority edge dislocation via the core‐shell lattice mismatch. Cathodoluminescence shows profound effects once an edge component is introduced, notably a lowering of the spontaneous emission quantum efficiency due to the ...
Eli Sutter, Peter Sutter
wiley   +1 more source