Results 91 to 100 of about 28,085 (109)
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Structure evolution and microwave dielectric characteristics of Hf1−xSnxO2 ceramics

Journal of The American Ceramic Society
High Q (Hf1−xSnx)O2 ceramics were prepared via a standard solid‐state reaction route, and the microwave dielectric characteristics were investigated systematically together with the structure evolution. With increasing x, the structure changed from HfO2 (
Yiwen Ding   +3 more
semanticscholar   +1 more source

The ferroelectric and piezoelectric properties of (Hf1−x Ce x )O2 films on indium tin oxide/Pt/TiO x /SiO2/(100)Si substrates obtained using a no-heating radio-frequency magnetron sputtering deposition method

Japanese Journal of Applied Physics
The effect of composition and film thickness on the ferroelectric and piezoelectric properties of (Hf1−x Ce x )O2 films deposited without substrate heating was investigated.
Nachi Chaya   +6 more
semanticscholar   +1 more source

Abstract 6182: Receipt of survivorship care plans is associated with self-reported health status for Black female cancer survivors in Maryland

Cancer Research
Survivorship care plans (SCPs) support the transition from specialized cancer treatment to primary care and have been promoted for improving cancer survivorship.
Camryn Mae Cohen   +4 more
semanticscholar   +1 more source

Curva de Luz y Propiedades Físicas del Asteroide Cercano a la Tierra (137170) 1999 HF1

Investigación y Pensamiento Crítico
Este trabajo presenta un estudio fotométrico del asteroide cercano a la Tierra (137170) 1999 HF1, un sistema binario perteneciente al grupo de los asteroides tipo Aten. Las observaciones se realizaron con el telescopio de 1,23 m del Observatorio de Calar
Joaquín Fabrega Polleri   +3 more
semanticscholar   +1 more source

A Comprehensive Study of Ferroelectric Properties of Fluorite-Structured Hf1-XZrxO2 Thin Films Grown on Mo Electrode with Various Thicknesses and Compositions

ECS Meeting Abstracts
Since ferroelectricity in Si-doped HfO2 was first reported in 2011,[1] HfO2-based thin films have attracted significant attention as an emerging material for ferroelectric devices due to their advantages such as scalability and compatibility with ...
Ju Yong Park   +5 more
semanticscholar   +1 more source

Modeling of Endurance Degradation of Anti-Ferroelectric HF1-xZRxO2 Capacitors

China Semiconductor Technology International Conference
The anti-ferroelectric HfZrO oxide has drawn attention due to its non-volatile characteristics (with a build-in bias) and high dielectric constant which is very important for DRAM applications.
Yaru Ding   +7 more
semanticscholar   +1 more source

Energy Material for Extreme Environment: Unveiling Novel Self-Resilience of Hf1-xZrxO2 for Electrostatic Energy Storage (EES) and Pyroelectric Energy Harvesting (PEH)

International Electron Devices Meeting
The antiferroelectric (AFE) Hf02-based capacitor has been proposed as dual-functional for electrostatic energy storage and pyroelectric energy harvesting (PEH) for the first time. The partial-AFE (P-AFE) has a superior power and energy density capability
C.-H. Liu   +5 more
semanticscholar   +1 more source

Abstract 6182: Artificial intelligence (AI)-powered quantification of glypican-3 (GPC3) expression facilitates patient selection for GPC3-targeted therapy in solid tumors

Cancer Research
Introduction: GPC3 is a glycosyl-phosphatidylinositol-anchored cell surface glycoprotein that functions to control cell growth and differentiation in early development.
E. Meng   +14 more
semanticscholar   +1 more source

Optimizing the Ferroelectric Properties of Hf1–xZrxO2 Films via Crystal Orientation

ACS Applied Electronic Materials, 2023
Chih-Yu Teng   +7 more
semanticscholar   +1 more source

Synthesis, Structure, and Properties of Diboride Solid Solutions (Hf1 –xTax)B2

Inorganic Materials: Applied Research, 2023
V. V. Kurbatkina   +6 more
semanticscholar   +1 more source

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