Results 91 to 100 of about 28,085 (109)
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Structure evolution and microwave dielectric characteristics of Hf1−xSnxO2 ceramics
Journal of The American Ceramic SocietyHigh Q (Hf1−xSnx)O2 ceramics were prepared via a standard solid‐state reaction route, and the microwave dielectric characteristics were investigated systematically together with the structure evolution. With increasing x, the structure changed from HfO2 (
Yiwen Ding +3 more
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Japanese Journal of Applied Physics
The effect of composition and film thickness on the ferroelectric and piezoelectric properties of (Hf1−x Ce x )O2 films deposited without substrate heating was investigated.
Nachi Chaya +6 more
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The effect of composition and film thickness on the ferroelectric and piezoelectric properties of (Hf1−x Ce x )O2 films deposited without substrate heating was investigated.
Nachi Chaya +6 more
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Cancer Research
Survivorship care plans (SCPs) support the transition from specialized cancer treatment to primary care and have been promoted for improving cancer survivorship.
Camryn Mae Cohen +4 more
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Survivorship care plans (SCPs) support the transition from specialized cancer treatment to primary care and have been promoted for improving cancer survivorship.
Camryn Mae Cohen +4 more
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Curva de Luz y Propiedades Físicas del Asteroide Cercano a la Tierra (137170) 1999 HF1
Investigación y Pensamiento CríticoEste trabajo presenta un estudio fotométrico del asteroide cercano a la Tierra (137170) 1999 HF1, un sistema binario perteneciente al grupo de los asteroides tipo Aten. Las observaciones se realizaron con el telescopio de 1,23 m del Observatorio de Calar
Joaquín Fabrega Polleri +3 more
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ECS Meeting Abstracts
Since ferroelectricity in Si-doped HfO2 was first reported in 2011,[1] HfO2-based thin films have attracted significant attention as an emerging material for ferroelectric devices due to their advantages such as scalability and compatibility with ...
Ju Yong Park +5 more
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Since ferroelectricity in Si-doped HfO2 was first reported in 2011,[1] HfO2-based thin films have attracted significant attention as an emerging material for ferroelectric devices due to their advantages such as scalability and compatibility with ...
Ju Yong Park +5 more
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Modeling of Endurance Degradation of Anti-Ferroelectric HF1-xZRxO2 Capacitors
China Semiconductor Technology International ConferenceThe anti-ferroelectric HfZrO oxide has drawn attention due to its non-volatile characteristics (with a build-in bias) and high dielectric constant which is very important for DRAM applications.
Yaru Ding +7 more
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International Electron Devices Meeting
The antiferroelectric (AFE) Hf02-based capacitor has been proposed as dual-functional for electrostatic energy storage and pyroelectric energy harvesting (PEH) for the first time. The partial-AFE (P-AFE) has a superior power and energy density capability
C.-H. Liu +5 more
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The antiferroelectric (AFE) Hf02-based capacitor has been proposed as dual-functional for electrostatic energy storage and pyroelectric energy harvesting (PEH) for the first time. The partial-AFE (P-AFE) has a superior power and energy density capability
C.-H. Liu +5 more
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Cancer Research
Introduction: GPC3 is a glycosyl-phosphatidylinositol-anchored cell surface glycoprotein that functions to control cell growth and differentiation in early development.
E. Meng +14 more
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Introduction: GPC3 is a glycosyl-phosphatidylinositol-anchored cell surface glycoprotein that functions to control cell growth and differentiation in early development.
E. Meng +14 more
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Optimizing the Ferroelectric Properties of Hf1–xZrxO2 Films via Crystal Orientation
ACS Applied Electronic Materials, 2023Chih-Yu Teng +7 more
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Synthesis, Structure, and Properties of Diboride Solid Solutions (Hf1 –xTax)B2
Inorganic Materials: Applied Research, 2023V. V. Kurbatkina +6 more
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