Results 71 to 80 of about 28,085 (109)

Comprehensive interpretations of thermodynamic and kinetic effects on the phase fractions in Hf1-xZrxO2 by first principle calculations

Applied Physics Reviews, 2023
Phase control in Hf1-xZrxO2 (HZO) is crucial for optimizing its electrical properties, such as ferroelectricity and high dielectricity. However, phase optimization in HZO has remained challenging due to limited theoretical understanding.
Kun Hee Ye, In Won Yeu, Gyuseung Han, Taeyoung Jeong, Seungjae Yoon, Dohyun Kim, C. S. Hwang, Jung-Hae Choi   +7 more
semanticscholar   +1 more source

Phase Transitions and Anti-Ferroelectric Behaviors in Hf1-xZrxO2 Films

IEEE Electron Device Letters, 2023
In this letter, we systematically studied the relationship between ferroelectricity/anti-ferroelectricity and the corresponding phase structures in Hf1-xZrxO2 (HZO) films.
Zeping Weng, Liang Zhao, Choonghyun Lee, Yi Zhao   +3 more
semanticscholar   +1 more source

Preparation, structure and properties of digoride’s solid solutions (Hf1 – хTaх)B2

Perspektivnye Materialy, 2023
Porous sinters of solid solutions were obtained from the elements by the SHS method and then crushed in a ball mill to a fraction of d50 < 10 µm. Single-phase (Hf1 – хTах)B2 solid solutions with a wide range of compositions were obtained by a hot ...
V. V. Kurbatkina, E. Patsera, T. Sviridova, P. Loginov, D. Sidorenko, A. S. Kolva, E. Levashov   +6 more
semanticscholar   +1 more source

Highly Reliable Hf1‐XZrXO2 with Ultra‐Low Operation Voltage (< 1 V) Enabled by Stoichiometric Control of Tungsten Oxide Interfacial Layer

Advanced Materials & Technologies
The reliability of hafnia‐based ferroelectrics at operating voltages below 1 V, the required voltage range for compatibility with advanced nodes, remains unexplored.
Mostafa Habibi, A. Kashir, Tony Schenk, Hojung Jang, Seungyeol Oh, Jaeseon Kim, Geonhui Han, Donghwa Lee, Foroozan Koushan, Hyunsang Hwang   +9 more
semanticscholar   +1 more source

Improved Performance of MoS2 Negative-Capacitance Transistors by Using Hf1-xAlxOy as Gate Dielectric Plus NH3-Plasma Treatment

IEEE Transactions on Electron Devices, 2023
A back-gate molybdenum disulfide (MoS2) negative-capacitance field-effect transistor (NCFET) based on a single-layer gate dielectric of Hf $_{{1} -{x}}$ AlxOy is fabricated to simplify the gate-dielectric process and simultaneously increase its ...
Yuqin Xia, Lu Liu, Shang-Chia Chen, Jingping Xu   +3 more
semanticscholar   +1 more source

RESEARCH OF SENSITIVE ELEMENTS OF THERMOELECTRIC CONVERTERS BASED ON Hf1-xNbxNiSn

Measuring Equipment and Metrology
The results of modeling and experimental studies of the structural, magnetic, electrokinetic and energy properties of the thermometric material Hf1-xNbxNiSn, as well as the conversion functions of the sensitive elements of a thermoelectric thermometer ...
V. Pashkevych, P. Haraniuk, Nataliya Luzhetska, V. Romaka, Y. Stadnyk, L. Romaka, A. Horyn, E. Hlil   +7 more
semanticscholar   +1 more source

Investigation of Electrical Characteristics on Morphotropic Phase Boundary of Hf1-xZrxO2 for Dynamic Random Access Memories

China Semiconductor Technology International Conference, 2023
This paper investigates the properties of different Zr compositions in $\mathrm{H}\mathrm{f}_{1-\mathrm{x}}\mathrm{Z}\mathrm{r}_{\mathrm{x}}\mathrm{O}_{2}$ films.
Kun Zhong, Huaxiang Yin, Zhaohao Zhang, Fan Zhang   +3 more
semanticscholar   +1 more source

Physical reservoir computing using ferroelectric Hf1−xZrxO2 devices for efficient temporal data processing: recent progress of materials, devices, and operating modes

Japanese Journal of Applied Physics
We review our recent progress in research on reservoir computing using Hf1−xZrxO2-based ferroelectric devices, focusing on exploring materials, devices, and operating modes.
K. Toprasertpong, R. Suzuki, Shin-Yi Min, E. Nako, R. Nakane, Mitsuru Takenaka, Shinichi Takagi   +6 more
semanticscholar   +1 more source

Evolution of the Interfacial Layer and Its Impact on Electric-Field-Cycling Behaviors in Ferroelectric Hf1-xZrxO2.

ACS Applied Materials and Interfaces, 2022
Doped HfO2 thin films, which exhibit robust ferroelectricity even with aggressive thickness scaling, could potentially enable ultralow-power logic and memory devices.
Fan Zhang, Zheng‐Dong Luo, Qiyu Yang, Jiuren Zhou, Jin Wang, Zhaohao Zhang, Qikui Fan, Yue Peng, Zhenhua Wu, Fei Liu, Shiyou Chen, Dongsheng He, H. Yin, G. Han, Y. Liu, Yue Hao   +15 more
semanticscholar   +1 more source

The Stabilization by Morphotropic Phase Boundary with a MoOx Cap on Hf1-xZrxO2 Dielectrics

ECS Journal of Solid State Science and Technology
Hf1-xZrxO2 (HZO) high-k dielectrics were fabricated by plasma-enhanced atomic layer deposition (PE-ALD). A conformal MoOx cap with high-thermal stability was then deposited before high-temperature post-metal annealing.
Ding-Yeong Wang, Kuei-Chih Lin, Cheng-Li Lin, Jer-Chyi Wang, Chun-Yao Tou, Pi-Chun Juan   +5 more
semanticscholar   +1 more source