Results 81 to 90 of about 28,085 (109)

Using Raman spectroscopy and x-ray diffraction for phase determination in ferroelectric mixed Hf1−xZrxO2-based layers

Journal of Applied Physics, 2022
The discovery of ferroelectric properties in the doped HfO2 and mixed Hf1−xZrxO2 systems made precise phase determination very important. However, due to the similarities of the diffraction peaks between the tetragonal and the orthorhombic phases, the ...
U. Schroeder, Ridham Sachdeva, P. Lomenzo, Bohan Xu, M. Materano, T. Mikolajick, A. Kersch   +6 more
semanticscholar   +1 more source

Enhancing FeFET Memory Reliability via Switching Mechanism Control by Compositionally Gradient-Stacked Hf1-xZrxO2 Films

IEEE Electron Device Letters
Hf1-xZrxO2 (HZO)-based n-channel FeFETs utilizing a compositionally gradient-stacked ferroelectric (FE) layer were employed as a platform to explore the switching mechanism and the reliability of device performance.
Sheng-Yen Zheng, Wei-Ning Kao, Yung-Hsien Wu   +2 more
semanticscholar   +1 more source

Influence of curing atmosphere on the pyrolysis mechanism of (Hf1/2Zr1/3Ti1/6)C precursor

Journal of The American Ceramic Society
This work systematically investigated the effects of curing atmospheres (air vs. nitrogen) on the pyrolysis mechanism of (Hf1/2Zr1/3Ti1/6)C (HZT) liquid precursor.
Shengman Yan, Xin Song, Han Yan, Li Ye, Weijian Han, Haifeng Cui, Cheng Li, Tong Zhao, W. Qiu, Zhongwei Zhang   +9 more
semanticscholar   +1 more source

Abstract 6182: Tumor treating fields (TTFields) concomitant with PARP inhibitors or carboplatin for treatment of ovarian cancer cell lines

Cancer Research, 2023
Purpose/Objectives: Ovarian cancer continues to be the leading cause of death among gynecological malignancies. Platinum-based chemotherapy is recommended after surgery for most patients with ovarian cancer; and PARP inhibitors (PARPi) are suggested as

semanticscholar   +1 more source

Kinetic Monte Carlo simulation reveals defect charge accumulation favoring ferroelectric phase formation in Hf1−xZrxO2 thin films

Journal of Applied Physics
Charged oxygen vacancies are thought to be responsible for fatigue effects in HfO2- and ZrO2-based ferroelectrics, while also supporting the formation of the ferroelectric phase.
L. Azevedo Antunes, Sebastian Obernberger, Paul Schwermer, Joshua Hintz, Richard Ganser, U. Schroeder, T. Mikolajick, A. Kersch   +7 more
semanticscholar   +1 more source

Improved Electrical Properties of MoS2 Negative-Capacitance Field-Effect Transistors by Using Ferroelectric Hf1-xYxOy Thin Films Plus NH3-Plasma Treatment

IEEE Transactions on Electron Devices
The negative-capacitance field-effect transistors (NCFETs) based on ferroelectric Hf $_{{1}-{x}}$ YxOy (HYO) thin films and MoS2 channel are fabricated, and the effects of Y content and annealing temperature of the HYO thin film on its ferroelectricity ...
Zhijian Chen, Jingping Xu, Di Jiang, Lu Liu   +3 more
semanticscholar   +1 more source

Multiple Polarization States in Hf1−xZrxO2 Thin Films by Ferroelectric and Antiferroelectric Coupling

Advances in Materials
HfO2‐based multi‐bit ferroelectric memory combines non‐volatility, speed, and energy efficiency, rendering it a promising technology for massive data storage and processing.
B. Zeng, Lanyan Yin, Ruiping Liu, Changfan Ju, Qinghua Zhang, Zhibin Yang, Shuaizhi Zheng, Qiangxiang Peng, Qiong Yang, Yichun Zhou, Min Liao   +10 more
semanticscholar   +1 more source

Demonstration of 1 V Reliable FeRAM Operation: Vc Engineering Using Quasi-Chirality of Hf1-xZrxO2 in a Nanolaminate Structure.

ACS Applied Materials and Interfaces
Hafnia thin films are known to demonstrate excellent performance with strong ferroelectricity and high scalability, making them promising candidates for CMOS-compatible materials. However, the reliability of ferroelectric devices must be further improved.
Hojung Jang, Alireza Kashir, Tony Schenk, Mostafa Habibi, Martin Schuster, Seungyeol Oh, Stefan Müeller, Hyunsang Hwang   +7 more
semanticscholar   +1 more source

Improvement of endurance and switching speed in Hf1−x Zr x O2 thin films using a nanolaminate structure

Nanotechnology, 2022
To improve the endurance and polarization switching speed of Hf1−x Zr x O2 (HZO) ferroelectric films, we designed a 10 nm Hf0.5Zr0.5O2 + ZrO2 (HZZ) nanolaminate structure.
Hojung Jang, Alireza Kashir, Seungyeol Oh, H. Hwang   +3 more
semanticscholar   +1 more source

High-performance MoS2 phototransistors with Hf1–x Al x O back-gate dielectric layer grown by plasma enhanced atomic layer deposition

Nanotechnology
Molybdenum sulfide (MoS2) as an emerging optoelectronic material, shows great potential for phototransistors owing to its atomic thickness, adjustable band gap, and low cost. However, the phototransistors based on MoS2 have been shown to have some issues
Qiu-Jun Yu, Xiaoxi Li, Yu-Chun Li, Si-Tong Ding, Teng Huang, Ze-Yu Gu, Lang-Xi Ou, Hongliang Lu   +7 more
semanticscholar   +1 more source