Results 231 to 240 of about 35,687 (255)
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Nanometer-Scale ${\rm HfO}_{x}$ RRAM

IEEE Electron Device Letters, 2013
HfOx-based resistive random access memory with an active area down to few nanometers in diameter is fabricated and characterized. Scaling trends for forming and switching characteristics are presented. For the smallest device with an active area of few nanometers in diameter, ac switching endurance of 108 cycles with more than 100 × resistance window ...
Zhiping Zhang   +3 more
openaire   +1 more source

On the Band Spectrum of HfO

Physica Scripta, 1971
The band spectrum of the diatomic molecule Hf180O16 has been investigated in emission in the region 2 300-11 500 A. 28 bands belonging to 6 different band systems have been rotationally analysed. The 6 band systems are due to transitions from 6 excited electronic states to the ground state X1Σ.
G Edvinsson, C H Nylén
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Catalytic activity of HFO₂ and Re-doped HFO₂ in benzyl acetate synthesis

Conferinţa ştiinţifico-practică internaţională "Instruire prin cercetare pentru o societate prosperă" = International scientific practical conference "Education through research for a prosperous society", 1-2 martie 2025. Vol. 1: Ştiinţe ale Naturii = Natural Sciences
This study investigates the catalytic activity of pure and rhenium-doped hafnium oxide (HfO₂:Re) in the esterification reaction of benzyl alcohol with acetic acid. The catalysts were synthesized using the polymeric precursor method and characterized by XRD and SEM-EDS.
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?????????? ?????????????? TiO??? ?? HfO???

2017
???????????????????? ?????? ?????????? ?????????????? TiO??? ?? HfO??? ?????????????????????? ???????????? ?????????????????????????????????????? ?? ?????????????????????????????????????????????????. ?????? HfO??? ???????????????? ???????????????????? ?????????????? ???????????????? ??????????????????. ?????? TiO??? ?????????????? ???????????????????? ?
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???????????? ?????????????????? ?????????????????????? ?????????????????????????????? ?????????????????????????? ???????????? ???????????? ?????????????? HfO??????Nd???O???

2014
The calculation technique of film parameters of multicomponent system HfO??????Nd???O???, obtained electron beam evaporation in vacuum, with non-uniform distribution of components on thickness is offered. The calculation data well correlate with results of experiment, that allows to obtained of a film with given dielectrical characteristics in a wide ...
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Ionisation coefficients in HFO-1336mzz(E) and HFO-1336mzz(E)/synthetic air mixtures

IET Conference Proceedings, 2023
Yuki Hasukawa   +6 more
openaire   +1 more source

HfO₂-Based Ferroelectric Optoelectronic Memcapacitors

IEEE Electron Device Letters, 2023
Ning Liu   +9 more
openaire   +1 more source

Comparison of the Physical and Electrical Properties of HfO₂/Al₂O₃/HfO₂/GeOx/Ge and HfO₂/Al₂O₃/GeOx/Ge Gate Stacks.

Journal of nanoscience and nanotechnology
A high-quality HfGeOx interfacial layer (IL) was formed in a HfO₂/Al₂O₃/HfO₂/GeOx gate stack through thermal annealing. The diffusing of GeO into the HfO₂ layer led to the mixing of the GeOx and HfO₂ layers, as identified through energy-dispersive X-ray Spectroscopy (EDX).
Yi-He, Tsai   +6 more
openaire   +1 more source

Automakers Go HFO

Chemical & Engineering News, 2010
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Fabian HFO Ventilator (Acutronic)

2022
Hendrik J. Niemarkt, T. Mohns
openaire   +1 more source

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