Results 231 to 240 of about 35,687 (255)
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Nanometer-Scale ${\rm HfO}_{x}$ RRAM
IEEE Electron Device Letters, 2013HfOx-based resistive random access memory with an active area down to few nanometers in diameter is fabricated and characterized. Scaling trends for forming and switching characteristics are presented. For the smallest device with an active area of few nanometers in diameter, ac switching endurance of 108 cycles with more than 100 × resistance window ...
Zhiping Zhang +3 more
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Physica Scripta, 1971
The band spectrum of the diatomic molecule Hf180O16 has been investigated in emission in the region 2 300-11 500 A. 28 bands belonging to 6 different band systems have been rotationally analysed. The 6 band systems are due to transitions from 6 excited electronic states to the ground state X1Σ.
G Edvinsson, C H Nylén
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The band spectrum of the diatomic molecule Hf180O16 has been investigated in emission in the region 2 300-11 500 A. 28 bands belonging to 6 different band systems have been rotationally analysed. The 6 band systems are due to transitions from 6 excited electronic states to the ground state X1Σ.
G Edvinsson, C H Nylén
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Catalytic activity of HFO₂ and Re-doped HFO₂ in benzyl acetate synthesis
Conferinţa ştiinţifico-practică internaţională "Instruire prin cercetare pentru o societate prosperă" = International scientific practical conference "Education through research for a prosperous society", 1-2 martie 2025. Vol. 1: Ştiinţe ale Naturii = Natural SciencesThis study investigates the catalytic activity of pure and rhenium-doped hafnium oxide (HfO₂:Re) in the esterification reaction of benzyl alcohol with acetic acid. The catalysts were synthesized using the polymeric precursor method and characterized by XRD and SEM-EDS.
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?????????? ?????????????? TiO??? ?? HfO???
2017???????????????????? ?????? ?????????? ?????????????? TiO??? ?? HfO??? ?????????????????????? ???????????? ?????????????????????????????????????? ?? ?????????????????????????????????????????????????. ?????? HfO??? ???????????????? ???????????????????? ?????????????? ???????????????? ??????????????????. ?????? TiO??? ?????????????? ???????????????????? ?
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2014
The calculation technique of film parameters of multicomponent system HfO??????Nd???O???, obtained electron beam evaporation in vacuum, with non-uniform distribution of components on thickness is offered. The calculation data well correlate with results of experiment, that allows to obtained of a film with given dielectrical characteristics in a wide ...
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The calculation technique of film parameters of multicomponent system HfO??????Nd???O???, obtained electron beam evaporation in vacuum, with non-uniform distribution of components on thickness is offered. The calculation data well correlate with results of experiment, that allows to obtained of a film with given dielectrical characteristics in a wide ...
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Ionisation coefficients in HFO-1336mzz(E) and HFO-1336mzz(E)/synthetic air mixtures
IET Conference Proceedings, 2023Yuki Hasukawa +6 more
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HfO₂-Based Ferroelectric Optoelectronic Memcapacitors
IEEE Electron Device Letters, 2023Ning Liu +9 more
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Journal of nanoscience and nanotechnology
A high-quality HfGeOx interfacial layer (IL) was formed in a HfO₂/Al₂O₃/HfO₂/GeOx gate stack through thermal annealing. The diffusing of GeO into the HfO₂ layer led to the mixing of the GeOx and HfO₂ layers, as identified through energy-dispersive X-ray Spectroscopy (EDX).
Yi-He, Tsai +6 more
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A high-quality HfGeOx interfacial layer (IL) was formed in a HfO₂/Al₂O₃/HfO₂/GeOx gate stack through thermal annealing. The diffusing of GeO into the HfO₂ layer led to the mixing of the GeOx and HfO₂ layers, as identified through energy-dispersive X-ray Spectroscopy (EDX).
Yi-He, Tsai +6 more
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