Results 71 to 80 of about 4,574 (182)

Control of Polarization and Polar Helicity in BiFeO3 by Epitaxial Strain and Interfacial Chemistry

Advanced Functional Materials, EarlyView.
In BiFeO3 thin films, the interplay of interfacial chemistry, electrostatics, and epitaxial strain is engineered to stabilize homohelicity in polarization textures at the domain scale. The synergistic use of a Bi2O2‐terminated Aurivillius buffer layer and a highly anisotropic compressive epitaxial strain offers new routes to control the polar‐texture ...
Elzbieta Gradauskaite, Lilia Huynh, Natascha Gray, Quintin N. Meier, Marta D. Rossell, Morgan Trassin   +5 more
wiley   +1 more source

Ferroelectricity in Antiferromagnetic Wurtzite Nitrides

Advanced Functional Materials, EarlyView.
We establish MnSiN2${\rm MnSiN}_2$ and MnGeN2${\rm MnGeN}_2$ as aristotypes of a new multiferroic wurtzite family that simultaneously exhibits ferroelectricity and antiferromagnetism with altermagnetic spin splitting. By strategically substituting alkaline‐earth metals, we predict new materials with coexisting switchable polarization, spin texture, and
Steven M. Baksa, Lin‐Ding Yuan, Stephen D. Wilson, James M. Rondinelli   +3 more
wiley   +1 more source

Modelling of AlAs/GaAs interfacial structures using high-angle annular dark field (HAADF) image simulations [PDF]

, 2012
High angle annular dark field (HAADF) image simulations were performed on a series of AlAs/GaAsinterfacial models using the frozen-phonon multislice method. Three general types of models were considered—perfect, vicinal/sawtooth and diffusion. These were
Finnie, M., Craven, A., Alan J. Craven, Paul D. Robb, Robb, P.D., Michael Finnie   +5 more
core   +1 more source

Polarizable Vanadium Dipoles Promote Water Dissociation on Vanadium‐Based Metal Organic Framework

Advanced Functional Materials, EarlyView.
The polarization of unpaired V 3d electrons weakens the H─O bond to improve water dissociation by the dual Vδ+:O─H and Pλ−:H─O coupling hydrogen bonds formation and relaxation. P@V‐MOF electrocatalyst shows low overpotentials (94 mV in acid, 178 mV in neutral, and 77 mV in alkaline solutions) with excellent stability for effective overall water ...
Xinjuan Liu, Jun Xu, Minmin Fan, Jingcheng Xu, Mengyuan Li, Yun Gong, Weiwei Yang, Lei Li, Yong Zhou, Deqiang Zhao, Yuhua Xue, Xingtao Xu, Chang Q. Sun, Liming Dai   +13 more
wiley   +1 more source

Domain walls, surface tension and wetting in the three-dimensional three-state Potts model

, 1991
Karsch F, Patkós A. Domain walls, surface tension and wetting in the three-dimensional three-state Potts model. Nuclear Physics, B. 1991;350(3):563-588.We study the thermodynamic properties of interfaces between differently ordered domains in the three ...
Karsch, Frithjof, Patkós, András, Patkós, A.   +2 more
core   +1 more source

Non-Perturbative High-Energy QCD [PDF]

, 2001
It is the aim of this talk to review our understanding of the high-energy limit of QCD, focussing, in particular, on recent theoretical developments. After a brief introduction, I will recall why the true high-energy limit of QCD scattering processes is ...
Hebecker, A, Arthur Hebecker
core   +1 more source

Role of Intrinsic Electron Trapping in Negative Charging of Amorphous Alumina

Advanced Functional Materials, EarlyView.
Intrinsic electron trapping in amorphous Al2O3 is examined using hybrid‐DFT models spanning a wide density range. Both spontaneous and thermally activated trapping are identified, with pronounced spontaneous localization in dense, partly crystallized structures.
Jack W. Strand, Kaja H. Hiorth, David Gao, Valeri Afanas'ev, Jaakko Akola, Alexander L. Shluger   +5 more
wiley   +1 more source

Charmonium correlation and spectral functions in quenched lattice QCD at finite temperature

, 2010
Ding H. Charmonium correlation and spectral functions in quenched lattice QCD at finite temperature. Bielefeld (Germany): Bielefeld University; 2010.In this thesis, we have investigated the properties of charmonium states at finite temperature in ...
Ding, Hengtong
core  

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source

Asymptotic energy dependence of hadronic total cross sections from lattice QCD

, 2012
The nonperturbative approach to soft high-energy hadron-hadron scattering, based on the analytic continuation of Wilson-loop correlation functions from Euclidean to Minkowskian theory, allows to investigate the asymptotic energy dependence of hadron ...
MORETTI N., Niccolò Moretti, MEGGIOLARO, ENRICO, Enrico Meggiolaro, GIORDANO M, Matteo Giordano   +5 more
core   +1 more source